Localized thinning of GaAs/GaAlAs nanostructures by a combined scanning electron micrograph/focus ion beam system for high-quality cross-sectional transmission electron microscopy samples

1993 ◽  
Vol 11 (3) ◽  
pp. 531 ◽  
Author(s):  
G. Ben Assayag
Keyword(s):  
Electron Microscopy ◽  
Ion Beam ◽  
Electron Micrograph ◽  
Scanning Electron Micrograph ◽  
High Quality ◽  
Cross Sectional ◽  
Beam System ◽  
Transmission Electron ◽  
Focus Ion Beam ◽  
Scanning Electron

Cross-Sectional Transmission Electron Microscopy Sample Preparation Using Focus Ion Beam Machine and Wedge Technique

1999 ◽  
Vol 5 (S2) ◽  
pp. 894-895 ◽  
Author(s):  
Du Li ◽  
Rose Zhou ◽  
Rob Zanoya
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
General Procedure ◽  
Ion Beam ◽  
Optical Microscope ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Focus Ion Beam ◽  
Tem Grid

As features on an IC chip become smaller than the resolution power of an optical microscope and of the size of the grinding particles, the trend for preparing cross-sectional transmission electron microscopy (TEM) samples at specific locations (bits) is moving towards using a focused ion beam (FIB) machine. Details on how to use a FIB machine to prepare cross-sectional TEM samples have been outlined in many references.The general procedure is to first mark the specific location (bit) in the FIB machine and then grind the sample down to about 20 microns, 10 microns on each side of the feature of interest. After grinding, the sample is mounted on a pre-cut TEM grid and thinned with the FIB to about 0.1 micron in the region containing the feature of interest. There are several disadvantages to this method. First, the sample goes into the FIB machine at least twice—once for FIB marks on the location and once again for the final thinning.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

scholarly journals Digital Imaging: When Should One Take The Plunge?

1997 ◽  
Vol 5 (4) ◽  
pp. 14-15
Author(s):  
John F. Mansfield
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Optical Microscopy ◽  
Digital Imaging ◽  
High Quality ◽  
Storage Devices ◽  
Major Benefit ◽  
Transmission Electron ◽  
Scanning Electron

The current imaging trend in optical microscopy, scanning electron microscopy (SEM) or transmission electron microscopy (TEM) is to record all data digitally. Most manufacturers currently market digital acquisition systems with their microscope packages. The advantages of digital acquisition include: almost instant viewing of the data as a high-quality positive image (a major benefit when compared to TEM images recorded onto film, where one must wait until after the microscope session to develop the images); the ability to readily quantify features in the images and measure intensities; and extremely compact storage (removable 5.25” storage devices which now can hold up to several gigabytes of data).

A Polishless Method For Preparation Of Cross-Sectional Tem Samples

1987 ◽  
Vol 115 ◽  
Author(s):  
J. T. Wetzel ◽  
D. A. Danner
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Beam ◽  
Ease Of Use ◽  
Traditional Methods ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Lift Off ◽  
Materials Used ◽  
Transparent Area

ABSTRACTCross-sectional samples for Transmission Electron Microscopy (TEM) have been made without the use of mechanical polishing and ion beam milling. Instead of traditional methods, we have used a combination of electron beam (e-beam) lithography for metal lift-off and reactive ion etching (RIE) to produce TEM samples of selected areas. The sample integrity for handling, dropping and ease of use is excellent, and the large amount of transparent area available for study is nearly 2 orders of magnitude larger than that given by traditional methods. The thickness of the samples is somewhat extreme, on the order of 0.50–1.0μm, but efforts are being made to reduce this dimension in order to make the method applicable to the whole range of materials used in silicon technology.

scholarly journals A Novel Sample Preparation Method for Frontside Inspection of GaN Devices after Backside Analysis

2021 ◽  
Author(s):  
Tony Colpaert ◽  
Stefaan Verleye
Keyword(s):  
Electron Microscopy ◽  
Sample Preparation ◽  
Preparation Method ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Tem Analysis ◽  
Transmission Electron ◽  
Die Surface ◽  
Emission Microscopy ◽  
Focus Ion Beam

Abstract Frontside die inspection by Scanning Electron Microscopy (SEM) is critical to investigate failures that appear dispersed over the GaN die surface and that will be very difficult to localize by the typical Focus Ion Beam (FIB) or Transmission Electron Microscopy (TEM) analysis. Frontside sample preparation is; however, extremely challenging if the device was already subjected to sample preparation for backside Photo Emission Microscopy (PEM). In this paper, a novel sample preparation method is presented where all front side layers are removed and only the 5μm GaN die is left for inspection.

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