Sexual Harassment and Abuse in Sports: In the Context of Turkey Sample Determination of Risk Factors in Relationship of Coaches and Female Athletes

Today, sexual harassment is common in all areas of daily life. Numerous scientific researchers have been conducted since the rate of sexual harassment has increased day by day. Nowadays, the increase of sexual abuse and harassment in almost every area of organizational structure and field is creating a serious threat, and it has forced many managers and academics to come together. In addition to the many organizations that have experienced sexual harassment, since many years sexual harassment and abuse have increased in sport fields and in different sport branches. What is the characteristic that makes sports field an area open to sexual abuse and that differs from other social areas? The first answer that comes to mind is transparency. Sports is seen as a transparent area due to the fact that it is independent of other areas of life. That is, the sport field is not operating as a different area which emphasizes only physical performance or ability regarded as a different field. Sexual harassment and abuse are not events that happen on their own in the sport. While harassment and abuse events in many areas of society are difficult to reveal, harassment and abuse events in sports are very visible. However, this visibility is only within the community. When you ask almost every sector working in the sports field, it seems that there is a story of harassment that they have lived or heard about in the past. The aim of this study is to offer suggestions to the athletes, their families and coaches for the prevention of sexual harassment and abuse in sport in order to eliminate the negative impact on athletes who have experienced and encountered sexual harassment and abuse in Turkey.

HREM applications to industrial products: Observation of thick-film resistors with very large electron transparent area

HRTEM is a very powerful tool for structural characterization of materials. However, its role in industry is still very limited and electron microscopy is generally considered as a secondary support technique, although it can uniquely provide microstructural information leading to understanding and improvement of product quality, especially for those materials in the form of films. An example in the semiconductor industry is recendy described by Anderson. He points out that the main concerns of imaging using a conventional cross-section sample preparation method are too small imaged areas, not representative of the product, and artifacts that may be introduced during the ion-milling process. Here we apply HREM to thick film resistors and attempt to overcome these obstacles.

Self-focusing limits at the laser-plasma interaction for treatment of cataract with nanosecond and picosecond pulses

Laser pulses are focused in the interior of a human eye in areas of opacity to produce there an optical breakdown resulting in a high-temperature plasma, after which the filling up with liquid results in a transparent area. The empirically given limits for Q-switch laser pulses in the nanosecond range and for mode-locked pulses in the picosecond range are analyzed, and it is shown that these limits are below the self-focusing condition of laser beams in plasmas. A further analysis evaluates theoretically where the maximum limits are given in order to provide the parameters for the highest possible pulse energy that avoids damage in the eye by self-focusing.

An improved dimpling technique for the preparation of TEM specimens

Traditional techniques for the preparation of TEM specimens have been electrolytic thinning or a combination of mechanical prethinning (dimpling) and ion-beam milling. The focus of discussion for this paper is an advanced technique for the mechanical dimpling procedure.A new device has been designed so that TEM specimens are consistently produced, thus minimizing the need for intensive operator intervention, trial and error methods, and ion-milling time. This instrument incorporates many of the features utilized in standard dimpling techniques. In addition, it provides the ability to simultaneously rotate and oscillate the specimen, resulting in an increased electron beam transparent area. Actual grinding rates are programmed with a resolution of 0.1 μ.m/min, thus eliminating the reliance on adjustable counterweight systems to control the grinding rate/force. A 40X microscope and movable magnetic specimen mount permit precise positioning that enables the dimple to be located at any point on the specimen. This is illustrated in Fig. 3, where the dimple is positioned on the interface of interest. An integral lamp back lights the specimen so that transparency can be detected without removing the specimen from the instrument. During the preparation process, the actual specimen thickness is continuously indicated on an alphanumeric display.

An Advanced Mechanical Dimpung Technique for the Preparation of TEM Specimens

ABSTRACTFor materials that are conducive to pre-thinning by mechanical techniques, a combination of dimpling and ion milling is commonly employed to produce TEM specimens. In order to minimize artifacts induced by ion milling and to provide an increased electron-beam transparent area, new instrumentation for mechanical thinning has been developed. Examples illustrating the utilization of this instrument in the preparation of cross-sectional interfaces from layered samples are discussed.

Preparation of Cross Sectional TEM Samples Using Lithographic Techniques and Reactive Ion Etching

ABSTRACTThis paper summarizes methods used to create cross-sectional samples for transmission electron microscopy and introduces another variant of the technique all of which rely upon some combination of lithographic patterning and reactive ion etching. The basic idea pursued in using these techniques was to form, from a preselected location, samples that had a large transparent area without use of mechanical polishing or ion milling. Samples were successfully prepared in this manner, but room for improvement remains due to the limited range of diffraction conditions available for imaging or diffraction pattern formation.

A Polishless Method For Preparation Of Cross-Sectional Tem Samples

ABSTRACTCross-sectional samples for Transmission Electron Microscopy (TEM) have been made without the use of mechanical polishing and ion beam milling. Instead of traditional methods, we have used a combination of electron beam (e-beam) lithography for metal lift-off and reactive ion etching (RIE) to produce TEM samples of selected areas. The sample integrity for handling, dropping and ease of use is excellent, and the large amount of transparent area available for study is nearly 2 orders of magnitude larger than that given by traditional methods. The thickness of the samples is somewhat extreme, on the order of 0.50–1.0μm, but efforts are being made to reduce this dimension in order to make the method applicable to the whole range of materials used in silicon technology.