Effect of Si δ doping and growth temperature on the I(V) characteristics of molecular-beam epitaxially grown GaAs/(AlGa)As resonant tunneling devices

1993 ◽  
Vol 11 (3) ◽  
pp. 958 ◽  
Author(s):  
M. Henini
Keyword(s):  
Growth Temperature ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices

RESONANT TUNNELING DEVICES

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-585-C5-588 ◽  
Author(s):  
R. E. NAHORY ◽  
N. TABATABAIE
Keyword(s):  
Resonant Tunneling ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices

Simulation of resonant tunneling devices based on different materials

2013 ◽  
Author(s):  
I. I. Abramov ◽  
Natali V. Kolomejtseva ◽  
I. A. Romanova ◽  
A. G. Klimovich
Keyword(s):  
Resonant Tunneling ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices
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