(111)B-oriented AlAs/GaAs/AIAs double barrier resonant tunneling devices grown in a gas source molecular beam epitaxy system

L. Cong; F. Williamson; M. I. Nathan

doi:10.1007/bf02666261

(111)B-oriented AlAs/GaAs/AIAs double barrier resonant tunneling devices grown in a gas source molecular beam epitaxy system

Journal of Electronic Materials ◽

10.1007/bf02666261 ◽

1996 ◽

Vol 25 (2) ◽

pp. 305-308 ◽

Cited By ~ 3

Author(s):

L. Cong ◽

F. Williamson ◽

M. I. Nathan

Keyword(s):

Molecular Beam Epitaxy ◽

Resonant Tunneling ◽

Molecular Beam ◽

Double Barrier ◽

Molecular Beam Epitaxy System ◽

Gas Source ◽

Tunneling Devices ◽

Resonant Tunneling Devices ◽

Double Barrier Resonant Tunneling

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Growth of (111)B‐oriented resonant tunneling devices in a gas source molecular beam epitaxy system

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580416 ◽

1996 ◽

Vol 14 (3) ◽

pp. 924-927 ◽

Cited By ~ 2

Author(s):

L. Cong ◽

J. D. Albrecht ◽

D. Cohen ◽

P. P. Ruden ◽

M. I. Nathan

Keyword(s):

Molecular Beam Epitaxy ◽

Resonant Tunneling ◽

Molecular Beam ◽

Molecular Beam Epitaxy System ◽

Gas Source ◽

Tunneling Devices ◽

Resonant Tunneling Devices

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Growth of p- and n-type GaAs/(AlGa)As double barrier resonant tunneling devices on (311)A and (111)B substrate orientations

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586314 ◽

1992 ◽

Vol 10 (4) ◽

pp. 2040 ◽

Cited By ~ 4

Author(s):

P. A. Harrison

Keyword(s):

Resonant Tunneling ◽

Double Barrier ◽

Tunneling Devices ◽

Resonant Tunneling Devices ◽

Double Barrier Resonant Tunneling

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Three terminal double barrier resonant tunneling devices with the base contact to the quantum well

1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings ◽

10.1109/smicnd.1997.651566 ◽

2002 ◽

Cited By ~ 2

Author(s):

M.I. Lepsa ◽

Th.G. van de Roer ◽

J.J.M. Kwaspen ◽

E. Smalbrugge ◽

W. van der Vleuten ◽

...

Keyword(s):

Quantum Well ◽

Resonant Tunneling ◽

Double Barrier ◽

Tunneling Devices ◽

Resonant Tunneling Devices ◽

Double Barrier Resonant Tunneling ◽

Base Contact

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Effect of Magnetic Field on Fine Structure of Tunnel Current in Double-Barrier Resonant-Tunneling Devices

Acta Physica Polonica A ◽

10.12693/aphyspola.88.675 ◽

1995 ◽

Vol 88 (4) ◽

pp. 675-678 ◽

Cited By ~ 1

Author(s):

A.E. Belyaev ◽

S.A. Vitusevich ◽

B.A. Glavin ◽

A. Mąkosa ◽

W. Dobrowolski

Keyword(s):

Magnetic Field ◽

Fine Structure ◽

Resonant Tunneling ◽

Tunnel Current ◽

Double Barrier ◽

Tunneling Devices ◽

Resonant Tunneling Devices ◽

Double Barrier Resonant Tunneling

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Influence of far infrared radiation on the current of double barrier resonant tunneling devices

16th International Conference on Infrared and Millimeter Waves ◽

10.1117/12.2297834 ◽

1991 ◽

Author(s):

C. Kutter

Keyword(s):

Infrared Radiation ◽

Resonant Tunneling ◽

Far Infrared ◽

Double Barrier ◽

Tunneling Devices ◽

Resonant Tunneling Devices ◽

Double Barrier Resonant Tunneling ◽

Far Infrared Radiation

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Hole space‐charge buildup and evidence for sequential tunneling inp‐type double‐barrier resonant tunneling devices

Applied Physics Letters ◽

10.1063/1.107275 ◽

1992 ◽

Vol 60 (12) ◽

pp. 1474-1476 ◽

Cited By ~ 20

Author(s):

R. K. Hayden ◽

L. Eaves ◽

M. Henini ◽

D. K. Maude ◽

J. C. Portal ◽

...

Keyword(s):

Space Charge ◽

Resonant Tunneling ◽

Double Barrier ◽

Tunneling Devices ◽

Resonant Tunneling Devices ◽

Double Barrier Resonant Tunneling

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Investigations of double barrier resonant tunneling devices based on (AlGa)As/GaAs

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584271 ◽

1988 ◽

Vol 6 (4) ◽

pp. 1161 ◽

Cited By ~ 13

Author(s):

O. H. Hughes

Keyword(s):

Resonant Tunneling ◽

Double Barrier ◽

Tunneling Devices ◽

Resonant Tunneling Devices ◽

Double Barrier Resonant Tunneling

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Transmission zero engineering in lateral double‐barrier resonant tunneling devices

Applied Physics Letters ◽

10.1063/1.115604 ◽

1996 ◽

Vol 68 (15) ◽

pp. 2120-2122 ◽

Cited By ~ 1

Author(s):

Zhi‐an Shao ◽

Wolfgang Porod ◽

Craig S. Lent

Keyword(s):

Resonant Tunneling ◽

Double Barrier ◽

Transmission Zero ◽

Tunneling Devices ◽

Resonant Tunneling Devices ◽

Double Barrier Resonant Tunneling

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AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.1501157 ◽

2002 ◽

Vol 81 (9) ◽

pp. 1729-1731 ◽

Cited By ~ 94

Author(s):

Akihiko Kikuchi ◽

Ryo Bannai ◽

Katsumi Kishino ◽

Chia-Ming Lee ◽

Jen-Inn Chyi

Keyword(s):

Molecular Beam Epitaxy ◽

Resonant Tunneling ◽

Molecular Beam ◽

Rf Plasma ◽

Resonant Tunneling Diodes ◽

Double Barrier ◽

Tunneling Diodes ◽

Double Barrier Resonant Tunneling

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Room temperature negative differential resistance in AlN/GaN double barrier resonant tunneling diodes grown by RF-plasma assisted molecular beam epitaxy

60th DRC. Conference Digest Device Research Conference ◽

10.1109/drc.2002.1029572 ◽

2003 ◽

Author(s):

A. Kikuchi ◽

R. Bannai ◽

K. Kishino

Keyword(s):

Molecular Beam Epitaxy ◽

Negative Differential Resistance ◽

Resonant Tunneling ◽

Room Temperature ◽

Molecular Beam ◽

Differential Resistance ◽

Rf Plasma ◽

Double Barrier ◽

Tunneling Diodes ◽

Double Barrier Resonant Tunneling

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