Growth of (111)B‐oriented resonant tunneling devices in a gas source molecular beam epitaxy system

1996 ◽  
Vol 14 (3) ◽  
pp. 924-927 ◽  
Author(s):  
L. Cong ◽  
J. D. Albrecht ◽  
D. Cohen ◽  
P. P. Ruden ◽  
M. I. Nathan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy System ◽  
Gas Source ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices

Recent Developments in Gas Source Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
J. E. Cunningham
Keyword(s):  
Molecular Beam Epitaxy ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Crystal Surface ◽  
Condensed Matter ◽  
High Quality ◽  
Covalent Bonds ◽  
Dopant Segregation ◽  
Gas Source ◽  
Recent Developments

ABSTRACTWe review Gas Source Molecular Beam Epitaxy of the GaAs/AlGaAs system. Among the growing number of condensed matter discoveries in materials grown by this approach we describe within resonant tunneling structures. This example serves to demonstrate the high quality quantum well formation and suppressed rate of dopant segregation that occurs during the GSMBE approach. We find a physical basis to quantify the latter growth effects when dopant segregation is viewed in two new ways. First, the broken translational symmetry created by the surface leads to dopant motion (as segregation) that otherwise is not allowed in the crystal interior (as diffusion). Secondly, dopants can dimerize on the crystal surface and this ultimately dictates how the rates of incorporation and segregation proceeds. The manner in which growth creates or destroyes covalent bonds of dopants on semiconductor surfaces thus presents new opportunities to improve dopant control.

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

RESONANT TUNNELING DEVICES

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-585-C5-588 ◽  
Author(s):  
R. E. NAHORY ◽  
N. TABATABAIE
Keyword(s):  
Resonant Tunneling ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices
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