Growth of p- and n-type GaAs/(AlGa)As double barrier resonant tunneling devices on (311)A and (111)B substrate orientations

1992 ◽  
Vol 10 (4) ◽  
pp. 2040 ◽  
Author(s):  
P. A. Harrison
Keyword(s):  
Resonant Tunneling ◽  
Double Barrier ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices ◽  
Double Barrier Resonant Tunneling

Hole space‐charge buildup and evidence for sequential tunneling inp‐type double‐barrier resonant tunneling devices

1992 ◽  
Vol 60 (12) ◽  
pp. 1474-1476 ◽  
Author(s):  
R. K. Hayden ◽  
L. Eaves ◽  
M. Henini ◽  
D. K. Maude ◽  
J. C. Portal ◽  
...  
Keyword(s):  
Space Charge ◽  
Resonant Tunneling ◽  
Double Barrier ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices ◽  
Double Barrier Resonant Tunneling

Sequential tunneling due to intersubband scattering in double‐barrier resonant tunneling devices

1988 ◽  
Vol 52 (3) ◽  
pp. 212-214 ◽  
Author(s):  
L. Eaves ◽  
G. A. Toombs ◽  
F. W. Sheard ◽  
C. A. Payling ◽  
M. L. Leadbeater ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Double Barrier ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices ◽  
Double Barrier Resonant Tunneling

Current bistability in double-barrier resonant-tunneling devices

1989 ◽  
Vol 39 (9) ◽  
pp. 6205-6207 ◽  
Author(s):  
T. J. Foster ◽  
M. L. Leadbeater ◽  
L. Eaves ◽  
M. Henini ◽  
O. H. Hughes ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Double Barrier ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices ◽  
Double Barrier Resonant Tunneling
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