Nanohole pattern formation on germanium induced by focused ion beam and broad beam Ga+ irradiation

2012 ◽  
Vol 100 (22) ◽  
pp. 223108 ◽  
Author(s):  
Monika Fritzsche ◽  
Arndt Muecklich ◽  
Stefan Facsko
Keyword(s):  
Pattern Formation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Broad Beam

Sub-Micron Selective Photoluminescence in Porous Si by Focused Ion Beam Implantation

1992 ◽  
Vol 281 ◽  
Author(s):  
A. J. Steckl ◽  
J. Xu ◽  
H. C. Mogul ◽  
S. Mogren
Keyword(s):  
Incubation Time ◽  
Focused Ion Beam ◽  
Hole Concentration ◽  
Ion Beam ◽  
Porous Si ◽  
Strong Function ◽  
Si Substrates ◽  
Si Doping ◽  
Broad Beam ◽  
First Time

ABSTRACTThe effect of Si doping on the formation of stain-etched porous Si and its photoluminescent properties was studied. Porous Si is obtained by purely chemical etching of crystalline Si in a solution of HF:HNO3:H2O in the ratio of 1:3:5. We have observed that an incubation time (ti) exists between the insertion of Si into the solution and the onset of porous Si production. This incubation time was found to be a strong function of hole concentration in both n- and p-Si. In p-Si, the ti decreased rapidly with increasing conductivity, whereas for n-Si the opposite (but not as pronounced) trend was found to be the case. For example in (B-doped) p-Si, ti, is only ∼0.5 min for 250 (Ω-cm)−1 but increases to ∼ 5 min for 0.2 (Ω-cm)−1. In (P-doped) n-Si substrates ti was ∼ 8 min for 0.2 (Ω-cm)−1 increasing to ∼ 10 min for 7 (Ω-cm)−1. Photoluminescence (PL) measurements of the porous Si obtained on substrates of various conductivity (p and n) show similar spectra, namely a peak at around 1.94 eV with a full width at half-maximum (FWHM) of about 0.5 eV. Based on the ti difference, we have fabricated localized photoemitting porous Si patterns by Ga+ focused ion beam (FIB) implantation doping and B+ broad beam (BB) implantation doping of n-type Si. Using 30 kV FIB Ga+ implantation, sub-micron photoemitting patterns have been obtained for the first time.

Fine Line Patterning By Focused Ion Beam Induced Decomposition of Palladium Acetate Films

1986 ◽  
Vol 75 ◽  
Author(s):  
L. R. Harriott ◽  
K. D. Cummings ◽  
M. E. Gross ◽  
W. L. Brown ◽  
J. Linnros ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Organic Material ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dose Range ◽  
Hydrogen Atmosphere ◽  
Palladium Acetate ◽  
Broad Beam ◽  
Potential Applications ◽  
Induced Decomposition

AbstractFine conducting features have been produced on Si and SiO2 substrates by irradiation of spin-on palladium acetate, [Pd(O2CCH3)2]3 films with a submicron focused ion beam. The exposures were made with a 20 keV Ga+, focused to a 0.2 micrometer spot. Electrical conductivity measuremnents were made on the resultant features as a function of ion dose for linewidths of one and ten micrometers. The sheet conductivity in the two cases was comparable and increased dramatically in the dose range between 2×1014 and 5×1014 ions/cm2. The conductivity of the exposed lines was further increased after heating in a hydrogen atmosphere. Measurements of carbon and oxygen content indicate that even at the highest ion doses a significant amount of organic material remains. Results are compared to those for 2 MeV He+ and Ne+ broad beam exposures. Potential applications are also discussed.

Delamination and Buckling Induced by Compressive Strain in Metal Thin Films

2005 ◽  
Vol 490-491 ◽  
pp. 655-660 ◽  
Author(s):  
Yao Gen Shen
Keyword(s):  
Thin Films ◽  
Pattern Formation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Compressive Strain ◽  
Ex Situ ◽  
Metal Thin Films ◽  
Force Microscopy ◽  
Steady Growth ◽  
Sputter Deposited

The pattern formation during delamination and buckling in sputter-deposited tungsten thin films under large compressive stresses was investigated. The films were analyzed in situ by a cantilever beam technique, and ex situ by atomic force microscopy (AFM) and focused ion beam. Depending on the magnitude of compressive strain in thin films, different types of buckling patterns were observed. For stresses above a critical value, there was a regime of steady growth in which the incipient blister evolves into a regular sinusoidal-like propagation. At higher strains, the sinusoidallike wrinkles were developed with constant widths and wavelengths. Some of the wrinkles bifurcated to form branches. With further increase in stress the complicated buckling patches were formed with many irregular lobes. These types of pattern formation have been supported by elastic energy calculations.

Broad and Focused Ion Beam Ga+ Implantation Damage in the Fabrication of p+-n Si Shallow Junctions

1989 ◽  
Vol 147 ◽  
Author(s):  
A. J. Steckl ◽  
C-M. Lin ◽  
D. Patrizio ◽  
A. K. Rai ◽  
P. P. Pronko
Keyword(s):  
Electrical Properties ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Recrystallization Behavior ◽  
Tem Analysis ◽  
Broad Beam ◽  
Implantation Damage ◽  
Shallow Junctions ◽  
Implantation Techniques ◽  
Lower Sheet Resistance

AbstractThe use of focused and broad beam Ga+ implantation for the fabrication of p+-n Si shallow junctions is explored. In particular, the issue of ion induced damage and its effect on diode electrical properties is explored. FIB-fabricated junctions exhibit a deeper junction with lower sheet resistance and higher leakage current than the BB-implanted diodes. TEM analysis exhibits similar amorphization and recrystallization behavior for both implantation techniques with the BB case generating a higher dislocation loop density after a 900°C anneal.

Unique nanopore pattern formation by focused ion beam guided anodization

2010 ◽  
Vol 21 (40) ◽  
pp. 405301 ◽  
Author(s):  
Zhi-Peng Tian ◽  
Kathy Lu ◽  
Bo Chen
Keyword(s):  
Pattern Formation ◽  
Focused Ion Beam ◽  
Ion Beam

A Study of Structural Damage & Recovery of Si, Ge and Ga FIB implants in Silicon

2014 ◽  
Vol 1712 ◽  
Author(s):  
Prabhu Balasubramanian ◽  
Jeremy F. Graham ◽  
Robert Hull
Keyword(s):  
Structural Damage ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Broad Beam ◽  
Implantation Damage ◽  
Before And After ◽  
And Control ◽  
Ion Current Density ◽  
Ion Species ◽  
Substantial Interest

ABSTRACTThe focused ion beam (FIB) has the necessary precision, spatial resolution and control over ion delivery for potential nano-scale doping of nanostructures such as semiconductor quantum dots (QDs). The ion current density in a FIB is 0.1-10 A/cm2, which is at least three orders of magnitude higher than that in a commercial broad beam ion implanter. Therefore an understanding of FIB implantation damage and recovery is of substantial interest. In this work we employ Raman probes of wavelengths 514 nm and 405 nm for quantifying ion implantation damage—both before and after annealing—in 30 kV Si2+, Ge2+ and Ga+ implants (fluences: 1x1012-5x1015 ions/cm2) into Si(100), for the purpose of understanding the effect of ion species on damage recovery.

scholarly journals FIB “Microsurgery” Part 1: A Sample Preparation Tool for the Microscopist

1995 ◽  
Vol 3 (9) ◽  
pp. 3-4
Author(s):  
Dave Laken
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Chemical Reactivity ◽  
Ion Beam ◽  
Site Specific ◽  
Broad Beam ◽  
Multiple Components ◽  
Material Systems ◽  
Different Characteristics

For sample preparation, e.g. cross-sectioning and thinning, SEM and TEM microscopists routinely use mechanical techniques (e.g., cleaving, slicing, lapping, polishing, and microtoming) and chemical or broad beam ion thinning. Two problems they run into are (1) locating the site of and crosssectioning or thinning at the site of extremely small features at specific locations (site specific samples) and (2) dealing with materials and material systems that are altered or destroyed by mechanical sample preparation (material-specific samples). These material systems may contain multiple components with dramatically different characteristics, such as hardness or chemical reactivity.Many of these limitations can be overcome by using focused ion beam (FIB) micromachining, often referred to as “FIB microsurgery.” This technique can locate micron and submicron features and use precisely placed cuts to cross section and thin samples.

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