ABSTRACTFocused ion beam (FIB) milling of diamonds has been investigated in various ways to create desired structures on diamonds, but not much research has been reported on the effects of crystal orientation, i.e. {100}, {110} and {111} of diamonds on FIB milling. In our previous work, it was noted that focused ion beam milling may develop preferred etched directions related to the crystal orientation of crystalline diamonds. In order to further investigate the phenomenon, a focused beam of 30 kV Ga+ ions was utilized to generate various patterns on different crystallographic planes of single crystalline diamonds. The morphology of milled patterns has been monitored with various ion currents to find the relationship between crystal orientations of diamonds and their impacts on FIB milled patterns. The work showed significant differences in deformation among different crystal orientations of the single crystal diamond, and the largest area of milling in {111} crystallographic planes.
Effect of Crystal Orientation on Imaging Contrast and Sputter Results during Focused Ion Beam Milling of Cu studied by FIB, EBSD, SEM, and AFM