Stress and Plastic Flow in Silicon During Amorphization by Ion-Bombardment

1989 ◽  
Vol 157 ◽  
Author(s):  
Cynthia A. Volkert
Keyword(s):  
Amorphous Silicon ◽  
Plane Stress ◽  
Laser Scanning ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Out Of Plane ◽  
Curvature Measurements

ABSTRACTThe in-plane stress in silicon wafers during amorphization by ion-bombardment was determined from wafer curvature measurements using an in-situ laser scanning technique. Measurements were made during room temperature bombardment with 2 MeV Ne, Si, Ar, Kr, and Xe ions. In all experiments, compressive stress was built-up in the bombarded region as a function of the fluence, until a maximum was reached at the dose required to form amorphous silicon. During further amorphization by bombardment, the stress decreased and eventually stabilized. If ion bombardment was interrupted during amorphization, a stress increase was observed over a period of several minutes; when the beam was turned on again, the stress returned immediately to the value measured before interruption. Step height measurements were performed on implanted wafers to determine the out-of-plane strain, and RBS was used to determine the damage profiles. A model is proposed that describes the behavior in terms of the expansion of crystalline silicon by the creation of defects and the flow of amorphous silicon under the ion beam.

Silicide Formation at HfO2/Si and ZrO2/Si Interfaces Induced by Ar+ Ion Bombardment

2003 ◽  
Vol 786 ◽  
Author(s):  
Yu. Lebedinskii ◽  
A. Zenkevich ◽  
D. Filatov ◽  
D. Antonov ◽  
J. Gushina ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Ex Situ ◽  
Silicide Formation ◽  
Ion Etching ◽  
Silicide Layer ◽  
Layer 2 ◽  
Silicon Interface

ABSTRACTThe effect of ion bombardment with Ar+ at the energy E=2.5 keV on HfO2/Si and ZrO2/Si interfaces has been investigated in situ with XPS by growing thin metal oxide layers and further ion etching them. It is shown that a silicide layer ∼2 nm in thickness is forming, and Ar+ ion beam affects MeO2/Si (Me=Hf, Zr) interface at thickness ≤3 nm. Ex situ AFM/STM corroborates the formation of silicide layer at metal oxide/silicon interface.

Formation and Crystallization of Amorphous Silicides at the Interface Between Thin Metal and Amorphous Silicon Films

1982 ◽  
Vol 18 ◽  
Author(s):  
S. R. Herd ◽  
K. Y. Ahn ◽  
K. N. Tu
Keyword(s):  
Amorphous Silicon ◽  
Amorphous Phase ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Diffraction Peak ◽  
Gold Films ◽  
Cubic Form ◽  
No Formation ◽  
Transmission Electron

We investigated the interaction of extremely thin (less than 10 nm) crystalline gold and rhodium films with amorphous silicon by transmission electron microscope in situ annealing. In thin Au/Si bilayers an amorphous phase with a diffraction peak at d ≂ 0.226 nm is formed by thermal annealing between 150 and 200 °C. Depending on the thickness and composition, silicon sputtered onto thin gold films leads to the formation of a layer of amorphous silicon and a partially amorphous Au-Si layer during deposition. The silicon layer crystallizes by itself at temperatures as low as 150 °C, and at 300 °C the amorphous Au–Si layer crystallizes into a metastable gold silicide (for silicon-rich compositions). In Rh/Si bilayers an amorphous Rh–Si phase is formed by annealing to 300 °C and can be detected by electron diffraction for a rhodium thickness of less than 5 nm and compositions with more than 50% Si if completely reacted. Above 300 °C the amorphous Rh-Si crystallizes preferentially in the cubic form of RhSi for intermediate silicon compositions and in the orthorhombic form of RhSi for high silicon compositions. Excess amorphous silicon is not found to have a lowered crystallization temperature when in contact with the amorphous Rh-Si alloy, and crystalline silicon is only observed above 730 °C together with the cubic and/or orthorhombic RhSi. In Rh/Si bilayers with a thicker rhodium layer, no formation of an amorphous phase was observed on annealing; instead crystalline Rh2Si forms during annealing above 300 °C.

Room‐temperature migration and interaction of ion beam generated defects in crystalline silicon

1996 ◽  
Vol 68 (24) ◽  
pp. 3422-3424 ◽  
Author(s):  
Vittorio Privitera ◽  
Salvatore Coffa ◽  
Francesco Priolo ◽  
Kim Kyllesbech Larsen ◽  
Giovanni Mannino
Keyword(s):  
Room Temperature ◽  
Crystalline Silicon ◽  
Ion Beam

Ultra high amorphous silicon passivation quality of crystalline silicon surface using in-situ post-deposition treatments

2014 ◽  
Vol 9 (1) ◽  
pp. 53-56 ◽  
Author(s):  
H. Meddeb ◽  
Twan Bearda ◽  
Wissem Dimassi ◽  
Yaser Abdulraheem ◽  
Hatem Ezzaouia ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Surface ◽  
Crystalline Silicon ◽  
Post Deposition

Room Temperature Nitridation and Oxidation of Si, Ge and Mbegrown Sige Using Low Energy Ion Beams (0.1-1 Kev).

1991 ◽  
Vol 223 ◽  
Author(s):  
O. Vancauwenberghe ◽  
O. C. Hellman ◽  
N. Herbots ◽  
J. L. Olson ◽  
W. J. Tan ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Film Properties ◽  
Dielectric Thin Films ◽  
Ion Energy ◽  
Insulating Films ◽  
Ion Energies ◽  
Energy Dependent

ABSTRACTDirect Ion Beam Nitridation (IBN) and Oxidation (IBO) of Si, Ge, and Si0.8Ge0.2 were investigated at room temperature as a function of ion energy. The ion energies were selected between 100 eV and 1 keV to establish the role of energy on phase formation and film properties. Si0.8Ge0.2 films were grown by MBE on Si (100) and transferred in UHV to the ion beam processing chamber. The modification of composition and chemical binding was measured as a function of ion beam exposure by in situ XPS analysis. The samples were nitridized or oxidized using until the N or O 1s signal reached saturation for ion doses between 5×1016 to 1×1017 ions/cm2. Combined characterization by XPS, SEM, ellipsometry and cross-section TEM showed that insulating films of stoichiometric SiO2 and Si-rich Si3N4 were formed during IBO and IBN of Si at all energies used. The formation of Ge dielectric thin films by IBO and IBN was found to be strongly energy dependent and insulating layers could be grown only at the lower energies (E ≤ 200 eV). In contrast to pure Ge, insulating SiGe-oxide and SiGe-nitride were successfully formed on Si0.8Ge0.20.2 at all energies studied.

Amorphisation, Crystallisation And Related Phenomena In Silicon

1985 ◽  
Vol 51 ◽  
Author(s):  
J.S. Williams
Keyword(s):  
Epitaxial Growth ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Heavy Ion ◽  
Impurity Effects ◽  
Surface Layers ◽  
Random Nucleation ◽  
Kinetics Of

ABSTRACTThis review examines recently observed phenomena associated with amorphisation and crystallisation of silicon under ion bombardment and furnace annealing. Ideally, heavy ion damage should completely amorphise the silicon surface layers so that the underlying crystal can provide a perfect template for subsequent epitaxial growth. However, in practise the ion bombardment and annealing behaviour can be decidedly more complex. During ion bombardment of silicon, several correlated processes can take place depending on the target temperature and the precise bombardment conditions. These processes include: defect production; amorphisation; diffusion and segregation of defects and impurities; and ion-beam-induced (epitaxial) crystallisation. During subsequent heat treatment, amorphous layers can exhibit anomalous impurity diffusion and precipitation effects, nucleation of random crystallites, and solid phase epitaxial growth. In addition, the kinetics of the epitaxial growth process are sensitive to the type and state of implanted impurities present in the silicon. The competition between random nucleation and epitaxy is also dominated by impurity effects. Finally, correlations between all of these phenomena provide i) considerable insight into impurity and defect behaviour in amorphous and crystalline silicon, and ii) a better understanding of the amorphous to crystalline phase transition, including mechanisms of solid phase epitaxial growth.

Ion Beam Injected Point Defects in Crystalline Silicon: Migration, Interaction and Trapping Phenomena

1996 ◽  
Vol 438 ◽  
Author(s):  
F. Priolo ◽  
V. Privitera ◽  
S. Coffa ◽  
S. Libertino
Keyword(s):  
Diffusion Coefficient ◽  
Long Range ◽  
Point Defects ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Temperature Diffusion ◽  
Range Migration ◽  
Limited Diffusion ◽  
Vacancy Type Defect

AbstractOur recent work on the room temperature migration and trapping phenomena of ion beam generated point defects in crystalline Si is reviewed. It is shown that a small fraction (∼ 10−6) of the defects generated at the surface by a shallow implant is injected into the bulk. These defects undergo a long range trap-limited diffusion and interact with both impurities, dopants and preexisting defects along their path. In particular, these interactions result in dopant deactivation and/or partial annihilation of pre-existing vacancy-type defect markers. It is found that in highly pure, epitaxial Si layers, these effects extend to several microns from the surface, demonstrating a long range migration of point defects at room temperature. By a detailed analysis of the experimental evidences we have identified the Si self-interstitials as the major responsible for the observed phenomena. This allowed us to give a lower limit of 6×10−11-cm2/s for the room temperature diffusion coefficient of the Si self-interstitials. Room temperature trap-limited migration of vacancies is also detected as a broadening in the divacancy profile of as implanted samples. In this case the room temperature diffusion coefficient of vacancies has been found to be ≥3 × 10−12 cm 2/s. These data are presented and their implications discussed.

In Situ Fast Temperature Measurement of Silicon Thin Films during the Excimer Laser Annealing

2006 ◽  
Vol 326-328 ◽  
pp. 195-198
Author(s):  
Seung Jae Moon
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Melting Point ◽  
Temperature Measurement ◽  
Amorphous Silicon ◽  
Laser Annealing ◽  
Crystalline Silicon ◽  
Excimer Laser Annealing ◽  
Silicon Thin Films

The formation and growth mechanism of polysilicon grains in thin films via laser annealing of amorphous silicon thin films are studied. The complete understanding of the mechanism is crucial to improve the thin film transistors used as switches in the active matrix liquid crystal displays. To understand the recrystallization mechanism, the temperature history and liquidsolid interface motion during the excimer laser annealing of 50-nm thick amorphous and polysilicon films on fused quartz substrates are intensively investigated via in-situ time-resolved thermal emission measurements, optical reflectance and transmittance measurements at near infrared wavelengths. The front transmissivity and reflectivity are measured to obtain the emissivity at the 1.52 μm wavelength of the probe IRHeNe laser to improve the accuracy of the temperature measurement. The melting point of amorphous silicon is higher than that of crystalline silicon of 1685 K by 100-150 K. This is the first direct measurement of the melting temperature of amorphous silicon thin films. It is found that melting of polysilicon occurs close to the melting point of crystalline silicon. Also the optical properties such as reflectance and transmittance are used to determine the melt duration by the detecting the difference of the optical properties of liquid silicon and solid silicon.

Crystallization Behaviour of Amorphous Si0.5Ge0.5 Films Observed by Positron Annihilation

1999 ◽  
Vol 581 ◽  
Author(s):  
F. Edelman ◽  
F. Börner ◽  
R. Krause-Rehrberg ◽  
P. Werner ◽  
R. Weil ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Amorphous Silicon ◽  
Solid Solutions ◽  
Room Temperature ◽  
Crystallization Behavior ◽  
Molecular Beam ◽  
Doppler Broadening ◽  
Boron Doped ◽  
Silicon And Germanium

ABSTRACTThe crystallization behavior (ordering) of undoped and boron-doped Si0.5Ge0.5 films, deposited on SiO2/Si(001) substrate by molecular beam epitaxy in hish vacuum at room temperature, were studied by XRD, HRTEM and in situ by Doppler broadening spectroscopy using monoenergetic positrons. Some decomposition features of SiGe solid solutions were demonstrated via splitting the XRD peaks at high temperatures. The SiGe decomposition was detected in the precrystalline state of the SiGe undoped and doped films in the temperature range from 450 to 600 K by compaering S- and W-parameters of SiGe with that of amorphous silicon and germanium. In conclusion, we discuss model of internim ordering states before crystallization.

Off-Axis Electron Holography of Self-Assembled Co Nanoparticle Rings

2007 ◽  
Vol 1026 ◽  
Author(s):  
Takeshi Kasama ◽  
Rafal E. Dunin-Borkowski ◽  
Michael R. Scheinfein ◽  
Steven L. Tripp ◽  
Jie Liu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Phase Image ◽  
Objective Lens ◽  
Electron Holography ◽  
Zero Field ◽  
Transmission Electron ◽  
Out Of Plane ◽  
Self Assembled ◽  
Magnetic States

AbstractWe use off-axis electron holography in the transmission electron microscope (TEM) to study magnetic flux closure (FC) states in self-assembled nanoparticle rings that each contain between five and eleven 25-nm-diameter Co crystals. Electron holograms are acquired at room temperature in zero-field conditions after applying chosen magnetic fields to the samples in situ in the TEM by partially exciting the conventional microscope objective lens. Mean inner potential contributions to the phase shift are determined by turning the samples over, and subsequently subtracted from each recorded phase image to obtain magnetic induction maps. Our results show that most nanoparticle rings form FC remanent magnetic states, and occasionally onion-like states. Although the chiralities (the directions of magnetization) of the FC states are determined by the shapes, sizes and positions of the constituent nanoparticles, reproducible magnetization reversal of each ring can be achieved by using an out-of-plane magnetic field of between 1600 and 2500 Oe.

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