Dynamics of ion bombardment-induced modifications of Si(001) at the radio-frequency-biased electrode in low-pressure oxygen plasmas: In situ spectroscopic ellipsometry and Monte Carlo study

2006 ◽  
Vol 100 (6) ◽  
pp. 063526 ◽  
Author(s):  
A. Amassian ◽  
M. Svec ◽  
P. Desjardins ◽  
L. Martinu
Keyword(s):  
Monte Carlo ◽  
Radio Frequency ◽  
Spectroscopic Ellipsometry ◽  
Monte Carlo Study ◽  
Ion Bombardment ◽  
Low Pressure ◽  
Pressure Oxygen

High temperature tribological behaviors of in-situ formed TiAl-TiB2 composites in low pressure oxygen

2021 ◽  
pp. 1-9
Author(s):  
Long Wang ◽  
Dongsheng Yang ◽  
Jiao Chen ◽  
Hui Tan ◽  
Shengyu Zhu ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Pressure ◽  
Tribological Behaviors ◽  
Pressure Oxygen

In-situ low pressure oxygen annealing of YBa2Cu3O7−δ single- and multilayer systems

1995 ◽  
Vol 243 (1-2) ◽  
pp. 24-28 ◽  
Author(s):  
G. Ockenfuβ ◽  
R. Wördenweber ◽  
T.A. Scherer ◽  
R. Unger ◽  
W. Jutzi
Keyword(s):  
Low Pressure ◽  
Multilayer Systems ◽  
Oxygen Annealing ◽  
Pressure Oxygen

XPS study of in-situ oxidation of an FeCr alloy by low pressure oxygen in the presence of water vapor

1993 ◽  
Vol 295 (1-2) ◽  
pp. A697
Author(s):  
C. Palacio ◽  
H.J. Mathieu ◽  
V. Stambouli ◽  
D. Landolt
Keyword(s):  
Water Vapor ◽  
Low Pressure ◽  
In Situ Oxidation ◽  
Pressure Oxygen ◽  
Xps Study

Extendibility Study of a PVD Cu Seed Process with Ar+ Rf-Plasma Enhanced Coverage for 45nm Interconnects

2008 ◽  
Vol 1079 ◽  
Author(s):  
Andrew H. Simon ◽  
Tibor Bolom ◽  
Teck Jung Tang ◽  
Brett Baker ◽  
Carsten Peters ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Radio Frequency ◽  
Low Pressure ◽  
Rf Plasma ◽  
Critical Importance ◽  
Dual Damascene ◽  
Transmission Electron ◽  
Plasma Enhancement

ABSTRACTWe present the results of a systematic benchmarking study, using 45nm-groundrule structures, of a commercially-available ionized PVD Cu technology which employs an in-situ Ar+ radio-frequency (Rf) plasma capability for enhanced coverage, and compare its performance and extendibility against the same seedlayer process operated in conventional low-pressure mode. Studies of single-damascene lines and dual-damascene via structures indicate that the PVD Cu seedlayer with Rf-Plasma enhancement enables a reduction of the PVD Cu seed thickness on the order of 35%, based on studies of Cu voiding, via-yield degradation, and transmission-electron microscopy (TEM). These results illustrate the critical importance of the Rf-plasma resputter capability in extending the PVD Cu process to advanced groundrules at 45nm and beyond.

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