An improved junction field-effect transistor static model for integrated circuit simulation

1990 ◽  
Vol 37 (7) ◽  
pp. 1773-1775 ◽  
Author(s):  
W.W. Wong ◽  
J.J. Liou ◽  
J. Prentice
Keyword(s):  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Circuit Simulation ◽  
Static Model ◽  
Effect Transistor

Division by current: a new approach to FET capacitance modeling

2011 ◽  
Vol 3 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Stephen Maas
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Circuit Simulation ◽  
New Approach ◽  
Charge Conservation ◽  
Capacitance Measurements ◽  
Current Formulation ◽  
Effect Transistor

This paper introduces a new approach to the modeling of capacitance in field-effect transistor (FET) devices, which we call division by current. It is compared with existing formulations, which we call division by capacitance and division by charge. In doing so, it is necessary to normalize the theory of nonlinear capacitances and to clarify a number of matters. These include charge conservation and determination of charge functions from capacitance measurements, which are often misstated in the literature. We find the division by current formulation to be practical and to have significant advantages in the generation of FET models and in circuit simulation.

Effect of the MOS Process on the Work-Function Difference Between the Polysilicon Gates and the Silicon Substrate

1990 ◽  
Vol 182 ◽  
Author(s):  
N. Lifshitz
Keyword(s):  
Integrated Circuit ◽  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Process Variations ◽  
Polysilicon Gate ◽  
Effect Transistor ◽  
Work Function Difference ◽  
Circuit Technology ◽  
Function Difference

AbstractPolysilicon gates are an important element of modem MOS integrated circuit technology. The workfunction difference (ϕps) between the polysilicon gate and the silicon substrate is a vital parameter of the MOS system because it determines the threshold voltage of the field-effect transistor. Ideally, ϕps is determined by the doping level in both polysilicon and the substrate. In reality process variations influence the ϕPS in a tangible way. Some of these effects are reviewed in the present paper.

Sign in / Sign up

Export Citation Format

Share Document