Studies of nucleation and growth morphology of boron-doped diamond microcrystals by scanning tunneling microscopy

1991 ◽  
Vol 9 (3) ◽  
pp. 1570 ◽  
Author(s):  
M. P. Everson
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Nucleation And Growth ◽  
Scanning Tunneling ◽  
Growth Morphology ◽  
Tunneling Microscopy ◽  
Boron Doped Diamond ◽  
Boron Doped

Topology of synthetic, boron-doped diamond by scanning tunneling microscopy

1994 ◽  
Vol 3 (1-2) ◽  
pp. 94-97 ◽  
Author(s):  
Shenda M. Baker ◽  
George R. Rossman ◽  
John D. Baldeschwieler
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Boron Doped Diamond ◽  
Boron Doped

scholarly journals Intrinsic granularity in nanocrystalline boron-doped diamond films measured by scanning tunneling microscopy

2009 ◽  
Vol 80 (22) ◽  
Author(s):  
B. L. Willems ◽  
V. H. Dao- ◽  
J. Vanacken ◽  
L. F. Chibotaru ◽  
V. V. Moshchalkov ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Diamond Films ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Boron Doped Diamond ◽  
Boron Doped

Investigating point defects in irradiated boron-doped diamond films by temperature-dependent electrical properties and scanning tunneling microscopy and spectroscopy

2010 ◽  
Vol 25 (3) ◽  
pp. 444-457 ◽  
Author(s):  
Sanju Gupta ◽  
John Farmer ◽  
Dario Daghero ◽  
Renato Gonnelli
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Point Defects ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Temperature Dependent ◽  
Boron Doped Diamond ◽  
Boron Doped

We report temperature-dependent electrical resistivity (or dc conductivity, σdc) down to 4 K for pristine and gamma-irradiated microwave plasma-assisted chemical vapor-deposited boron-doped diamond films with [B]/[C]gas = 4000 ppm to gain insights into the nature of conduction mechanism, distribution, and kinetics of point defects generated due to gamma irradiation prompted by the article [Gupta et al., J. Mater. Res.24, 1498 (2009)]. The pristine samples exhibit typical metallic conduction up to 50 K and with reduction in temperature to 25 K, the σdc decreases monotonically followed by saturation at 4 K, suggesting “disordered” metal or “localized” behavior. For irradiated films, continuous increasing resistivity with decreasing temperature demonstrates semiconducting behavior with thermal activation/hopping conduction phenomena. It is intriguing to propose that irradiation leads to substantial hydrogen redistribution leading to unexpected low-temperature resistivity behavior. Scanning tunneling microscopy/spectroscopy helped to illustrate local grain and grain boundary effects.

scholarly journals Scanning tunneling microscopy and spectroscopy studies of superconducting boron-doped diamond films

2006 ◽  
Vol 7 (sup1) ◽  
pp. S22-S26 ◽  
Author(s):  
Terukazu Nishizaki ◽  
Yoshihiko Takano ◽  
Masanori Nagao ◽  
Tomohiro Takenouchi ◽  
Hiroshi Kawarada ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Diamond Films ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Spectroscopy Studies

STM Study of Diamond(001) Surface

1992 ◽  
Vol 242 ◽  
Author(s):  
Takashi Tsuno ◽  
Takahiro Imai ◽  
Yoshiki Nishibayashi ◽  
Naoji Fujimori
Keyword(s):  
Methane Concentration ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Partially Observed ◽  
Type Reconstruction ◽  
B Doping

ABSTRACTUndoped and boron-doped diamond epitaxial films were deposited on diamond(001) substrate by micro-wave plasma assisted chemical vapor deposition and their surfaces were studied by scanning tunneling microscopy in air. An atomic order resolution was confirmed for the observation.For the undoped epitaxial films, which showed 2×1 and 1×2 RHEED patterns, dimer type reconstruction was observed and it was considered that the growth occurs through the dimer row extension. In the case of B-doped films, the dimer reconstruction was also observed. However, 2×2 structure due to the absence of dimer was partially observed.The effect of boron concentration and methane concentration during epitaxial growth on the surface morphology were also studied. The morphology observed by STM became flatter, as the concentration of B-doping and methane concentration, during growth, increased.

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