scholarly journals Scanning tunneling microscopy and spectroscopy studies of superconducting boron-doped diamond films

2006 ◽  
Vol 7 (sup1) ◽  
pp. S22-S26 ◽  
Author(s):  
Terukazu Nishizaki ◽  
Yoshihiko Takano ◽  
Masanori Nagao ◽  
Tomohiro Takenouchi ◽  
Hiroshi Kawarada ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Diamond Films ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Spectroscopy Studies

scholarly journals Intrinsic granularity in nanocrystalline boron-doped diamond films measured by scanning tunneling microscopy

2009 ◽  
Vol 80 (22) ◽  
Author(s):  
B. L. Willems ◽  
V. H. Dao- ◽  
J. Vanacken ◽  
L. F. Chibotaru ◽  
V. V. Moshchalkov ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Diamond Films ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Boron Doped Diamond ◽  
Boron Doped

Investigating point defects in irradiated boron-doped diamond films by temperature-dependent electrical properties and scanning tunneling microscopy and spectroscopy

2010 ◽  
Vol 25 (3) ◽  
pp. 444-457 ◽  
Author(s):  
Sanju Gupta ◽  
John Farmer ◽  
Dario Daghero ◽  
Renato Gonnelli
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Point Defects ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Temperature Dependent ◽  
Boron Doped Diamond ◽  
Boron Doped

We report temperature-dependent electrical resistivity (or dc conductivity, σdc) down to 4 K for pristine and gamma-irradiated microwave plasma-assisted chemical vapor-deposited boron-doped diamond films with [B]/[C]gas = 4000 ppm to gain insights into the nature of conduction mechanism, distribution, and kinetics of point defects generated due to gamma irradiation prompted by the article [Gupta et al., J. Mater. Res.24, 1498 (2009)]. The pristine samples exhibit typical metallic conduction up to 50 K and with reduction in temperature to 25 K, the σdc decreases monotonically followed by saturation at 4 K, suggesting “disordered” metal or “localized” behavior. For irradiated films, continuous increasing resistivity with decreasing temperature demonstrates semiconducting behavior with thermal activation/hopping conduction phenomena. It is intriguing to propose that irradiation leads to substantial hydrogen redistribution leading to unexpected low-temperature resistivity behavior. Scanning tunneling microscopy/spectroscopy helped to illustrate local grain and grain boundary effects.

Topology of synthetic, boron-doped diamond by scanning tunneling microscopy

1994 ◽  
Vol 3 (1-2) ◽  
pp. 94-97 ◽  
Author(s):  
Shenda M. Baker ◽  
George R. Rossman ◽  
John D. Baldeschwieler
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Boron Doped Diamond ◽  
Boron Doped

SPATIAL VARIATION OF TUNNELING SPECTRA IN (111)-ORIENTED FILMS OF BORON-DOPED DIAMOND PROBED BY STM/STS

2013 ◽  
Vol 27 (15) ◽  
pp. 1362014 ◽  
Author(s):  
TERUKAZU NISHIZAKI ◽  
TAKAHIKO SASAKI ◽  
NORIO KOBAYASHI ◽  
YOSHIHIKO TAKANO ◽  
MASANORI NAGAO ◽  
...  
Keyword(s):  
Diamond Films ◽  
Boron Doping ◽  
Spatial Variations ◽  
Scanning Tunneling ◽  
Tunneling Conductance ◽  
Tunneling Microscopy ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Oriented Films ◽  
Characteristic Features

We report on scanning tunneling microscopy/spectroscopy (STM/STS) experiments on boron-doped diamond films. The tunneling conductance dI/dV spectra measured on the (111)-oriented surface show spatial variations which distribute irrespective of the surface morphology. The spatial variations are discussed in terms of characteristic features of the superconductivity under the condition of the considerable disorder by the boron doping.

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