Nucleation and growth of Ge nanoclusters on the Si(111)-(7 × 7) surface studied by scanning tunneling microscopy

2014 ◽  
Vol 47 (2) ◽  
pp. 222-226
Author(s):  
Yongping Zhang ◽  
Zhiqian Chen ◽  
Guo Qin Xu ◽  
Eng Soon Tok
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Nucleation And Growth ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Probing nucleation and growth phenomena on silicon surfaces by scanning tunneling microscopy/spectroscopy

1989 ◽  
Vol 47 ◽  
pp. 28-29
Author(s):  
R.J. Hamers ◽  
U.K. Kohler ◽  
K. Markert ◽  
J.E. Demuth
Keyword(s):  
Electronic Structure ◽  
Scanning Tunneling Microscopy ◽  
Chemical Reactivity ◽  
Real Space ◽  
Nucleation And Growth ◽  
Silicon Surfaces ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Surface Geometry ◽  
Local Electronic Structure

Nucleation and growth processes have long been studied using diffraction technique On semiconductor surfaces, localized defects strongly affect both the electron properties of the surfaces as well as their reactivity, therby affecting nucleat and growth. In order to identify the role of local electronic structure, and surface irregularities such as steps and defects, a real-space probe of electronic structure is needed. Scanning tunneling microscopy is capable of probing both the local surface geometry and local electronic structure, permitting adsorption and chemical reactivity to be studied on an atom-by-atom basis.

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