Low temperature growth of AIGaP and GaP on si substrates by atomic layer epitaxy

1992 ◽  
Vol 21 (10) ◽  
pp. 965-970 ◽  
Author(s):  
J. R. Gong ◽  
S. Nakamura ◽  
M. Leonard ◽  
S. M. Bedair ◽  
N. A. El-Masry
1989 ◽  
Vol 163 ◽  
Author(s):  
J. Ramdani ◽  
B.T. Mcdermott ◽  
S.M. Bedair

AbstractWe report on the low temperature growth of GaAs on Ge substrates using Atomic Layer Epitaxy. Low temperature deposition has resulted in substantial reduction of the outdiffusion of Ge into the GaAs epilayer as being indicated from SIMS. The I-V characteristics of the GaAs/Ge heterojunction were thyristor like or near abrupt depending on the growth temperature. We also report on the use of the Atomic Layer Epitaxy self-limiting adsorption process of TMGa to control the diffusion of Ga into Ge substrates at the monolayer level.


2007 ◽  
Vol 112 (2) ◽  
pp. 401-406 ◽  
Author(s):  
I.A. Kowalik ◽  
E. Guziewicz ◽  
K. Kopalko ◽  
S. Yatsunenko ◽  
M. Godlewski ◽  
...  

2013 ◽  
Vol 62 (11) ◽  
pp. 117302
Author(s):  
Feng Jia-Heng ◽  
Tang Li-Dan ◽  
Liu Bang-Wu ◽  
Xia Yang ◽  
Wang Bing

2008 ◽  
Vol 53 (9(5)) ◽  
pp. 2880-2883 ◽  
Author(s):  
E. Guziewicz ◽  
M. Godlewski ◽  
K. Kopalko ◽  
I. A. Kowalik ◽  
S. Yatsunenko ◽  
...  

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