Erratum: Use of Raman spectroscopy to characterize strain III–V epilayers: Application to InAs on GaAs(001) grown by molecular-beam epitaxy [J. Vac. Sci. Technol. B 7, 365 (1989)]

1989 ◽  
Vol 7 (6) ◽  
pp. 1372
Author(s):  
Alain C. Diebold
Keyword(s):  
Raman Spectroscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

Effects of Substrate Orientation on the Spontaneous Ordering of GaAsSb Epilayers Grown by Molecular Beam Epitaxy

2003 ◽  
Vol 794 ◽  
Author(s):  
Brian P. Gorman ◽  
Andrew G. Norman ◽  
Reiko Lukic-Zrnic ◽  
Terry D. Golding ◽  
Chris L. Littler
Keyword(s):  
Raman Spectroscopy ◽  
Fourier Transform ◽  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
Energy Gap ◽  
Atomic Ordering ◽  
Substrate Orientation ◽  
Gaas Substrates ◽  
Transmission Electron

ABSTRACTSpontaneous atomic ordering is investigated in a series of GaAs1−xSbx epilayers (0.51 < x < 0.71) grown by molecular beam epitaxy (MBE) on GaAs substrates with surface orientations of (001), (001) – 8° toward (111)A, (001) – 8° toward (111)B, (115)A, (115)B, (113)A, and (113)B. Atomic ordering in these epilayers was observed from a decrease in the energy gap measured by Fourier transform infrared (FTIR) absorption spectroscopy and corroborated by superlattice reflections in transmission electron diffraction and Raman spectroscopy. Contrary to previous investigations of ordering in III-V alloys, a marked energy gap reduction corresponding to CuPt-B type ordering is observed in the GaAs1−xSbx grown on (111)A-type orientations.

Raman spectroscopy based measurements of carrier concentration in n-type GaN nanowires grown by plasma-assisted molecular beam epitaxy

2016 ◽  
Vol 120 (12) ◽  
pp. 124313 ◽  
Author(s):  
L. H. Robins ◽  
E. Horneber ◽  
N. A. Sanford ◽  
K. A. Bertness ◽  
M. D. Brubaker ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Molecular Beam Epitaxy ◽  
Carrier Concentration ◽  
Molecular Beam ◽  
Gan Nanowires

scholarly journals Origin of Ultraviolet Luminescence from Bulk ZnO Thin Films Grown by Molecular Beam Epitaxy

2011 ◽  
Vol 1 ◽  
pp. 135-139 ◽  
Author(s):  
M. Asghar ◽  
Khalid Mahmood ◽  
Adnan Ali ◽  
M.A. Hasan ◽  
I. Hussain ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Energy Dispersive ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Uv Luminescence

Origin of ultraviolet (UV) luminescence from bulk ZnO has been investigated with the help of photoluminescence (PL) measurements. Thin films of ZnO having 52%, 53% and 54% of Zn-contents were prepared by means of molecular beam epitaxy (MBE). We observed a dominant UV line at 3.28 eV and a visible line centered at 2.5 eV in the PL spectrum performed at room temperature. The intensity of UV line has been found to depend upon the Zn percentage in the ZnO layers. Thereby, we correlate the UV line in our samples with the Zn-interstitials-bound exciton (Zni-X) recombination. The results obtained from, x-ray diffraction, the energy dispersive X-ray spectrum (EDAX) and Raman spectroscopy supported the PL results.

PREFERENTIAL ORIENTATION GROWTH OF AlN THIN FILMS ON Si(111) SUBSTRATES BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY

2009 ◽  
Vol 16 (06) ◽  
pp. 925-928 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Micro Raman Spectroscopy ◽  
Raman Modes ◽  
Orientation Growth ◽  
Good Agreement

This article reports the use of plasma-assisted molecular beam epitaxy (MBE) to grow AlN on Si (111) substrate at 850°C under UHV conditions for 15, 30, and 45 min. The films were characterized by high-resolution X-ray diffraction (HR-XRD) and micro-Raman spectroscopy. XRD measurement revealed that the AlN was epitaxially grown on Si (111). Micro-Raman result showed that all the allowed Raman modes of AlN and Si were clearly visible. Fourier transform infrared (FTIR) spectroscopy has been used to investigate the A1 (LO) and E1 (TO) modes with frequencies (890–899) cm-1 and (668–688) cm-1, respectively. The results are in good agreement with reported phonon frequencies of AlN grown on Si (111).

Surface Enhanced Raman Spectroscopy of Pyridine on CdSe/ZnBeSe Quantum Dots Grown by Molecular Beam Epitaxy

2010 ◽  
Vol 114 (41) ◽  
pp. 17460-17464 ◽  
Author(s):  
Richard Livingstone ◽  
Xuecong Zhou ◽  
Maria C. Tamargo ◽  
John R. Lombardi ◽  
Lucia G. Quagliano ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Raman Spectroscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Enhanced Raman Spectroscopy ◽  
Surface Enhanced ◽  
Surface Enhanced Raman
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