Raman spectroscopy based measurements of carrier concentration in n-type GaN nanowires grown by plasma-assisted molecular beam epitaxy

2016 ◽  
Vol 120 (12) ◽  
pp. 124313 ◽  
Author(s):  
L. H. Robins ◽  
E. Horneber ◽  
N. A. Sanford ◽  
K. A. Bertness ◽  
M. D. Brubaker ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Molecular Beam Epitaxy ◽  
Carrier Concentration ◽  
Molecular Beam ◽  
Gan Nanowires

Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature

2011 ◽  
Vol 334 (1) ◽  
pp. 177-180 ◽  
Author(s):  
Rafael Mata ◽  
Karine Hestroffer ◽  
Jorge Budagosky ◽  
Ana Cros ◽  
Catherine Bougerol ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Effect Of Temperature ◽  
Gan Nanowires

scholarly journals Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 366 ◽  
Author(s):  
Alexana Roshko ◽  
Matt Brubaker ◽  
Paul Blanchard ◽  
Todd Harvey ◽  
Kris Bertness
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Buffer Layers ◽  
Selective Area Growth ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth ◽  
Eutectic Formation

Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al–Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Eutectic related defects in the Si surface caused voids in N-polar samples, but not in metal-polar samples. Likewise, inversion domains were present in N-polar, but not metal-polar samples. The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG.

Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy

2011 ◽  
Vol 11 (10) ◽  
pp. 4257-4260 ◽  
Author(s):  
Pinar Dogan ◽  
Oliver Brandt ◽  
Carsten Pfüller ◽  
Jonas Lähnemann ◽  
Uwe Jahn ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality ◽  
Gan Nanowires

Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy

2016 ◽  
Vol 119 (22) ◽  
pp. 224305 ◽  
Author(s):  
J. E. Kruse ◽  
L. Lymperakis ◽  
S. Eftychis ◽  
A. Adikimenakis ◽  
G. Doundoulakis ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Area Growth ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

Polarization-resolved photoluminescence study of individual GaN nanowires grown by catalyst-free molecular beam epitaxy

2006 ◽  
Vol 88 (21) ◽  
pp. 213106 ◽  
Author(s):  
John B. Schlager ◽  
Norman A. Sanford ◽  
Kris A. Bertness ◽  
Joy M. Barker ◽  
Alexana Roshko ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Study ◽  
Gan Nanowires ◽  
Catalyst Free

Nucleation and Growth of GaN Nanowires on Si(111) Performed by Molecular Beam Epitaxy

Nano Letters ◽  
2007 ◽  
Vol 7 (8) ◽  
pp. 2248-2251 ◽  
Author(s):  
Raffaella Calarco ◽  
Ralph J. Meijers ◽  
Ratan K. Debnath ◽  
Toma Stoica ◽  
Eli Sutter ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nucleation And Growth ◽  
Gan Nanowires

Electrical characterization of ensemble of GaN nanowires grown by the molecular beam epitaxy technique

2013 ◽  
Vol 103 (9) ◽  
pp. 092103 ◽  
Author(s):  
Vl. Kolkovsky ◽  
Z. R. Zytkiewicz ◽  
M. Sobanska ◽  
K. Klosek
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Gan Nanowires

Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry

CrystEngComm ◽  
2018 ◽  
Vol 20 (23) ◽  
pp. 3202-3206 ◽  
Author(s):  
Pierre Corfdir ◽  
Gabriele Calabrese ◽  
Apurba Laha ◽  
Thomas Auzelle ◽  
Lutz Geelhaar ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Relevant Information ◽  
Area Fraction ◽  
Gan Nanowires ◽  
Covered Area ◽  
Optical Reflectometry

Accessing in situ relevant information on the fluctuations in length and covered area fraction at the μm scale of vertical nanowire ensembles by polarization resolved optical reflectometry.

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