Synthesis of cubic CdSe nanocrystals and their spectral properties

The cadmium selenide nanocrystals are prepared by colloidal chemistry under mild conditions. X-ray diffraction and high-resolution transmission electron microscopy measurements indicate that as-prepared cadmium selenide nanocrystals are zinc blende cubic structure. We carry out an analysis of quantum size effect in the Raman spectra of cadmium selenide nanocrystals performed by utilizing the chemical bond theory of Raman peak shift developed recently. It is revealed that the shifts of Raman peaks in cadmium selenide nanocrystals result from the overlapping of the quantum effect shifts and surface effect shifts. The sizes of the as-prepared cadmium selenide nanocrystals obtained by employing the Raman peak shift theory are in good agreement with the nanocrystal sizes determined by high-resolution transmission electron microscopy.

Influence of applied current density on the nanostructural and light emitting properties of n-type porous silicon

Effects of current density on nanostructure and light emitting properties of porous silicon (PS) samples were investigated by field emission scanning electron microscope (FE-SEM), gravimetric method, Raman and photoluminescence (PL) spectroscopy. FE-SEM images have shown that below 60 mA/cm 2, macropore and mesopore arrays, exhibiting rough morphology, are formed together, whose pore diameter, pore depth and porosity are about 265–760 nm, 58–63 μ m and 44–61%, respectively. However, PS samples prepared above 60 mA/cm 2 display smooth and straight macropore arrays, with pore diameter ranging from 900–1250 nm, porosity of 61–80% and pore depth between 63–69 μ m . Raman analyses have shown that when the current density is increased from 10 mA/cm 2 to 100 mA/cm 2, Raman peaks of PS samples shift to lower wavenumbers by comparison to crystalline silicon (c-Si). The highest Raman peak shift is found to be 3.2 cm -1 for PS sample, prepared at 90 mA/cm 2, which has the smallest nanocrystallite size, about 5.2 nm. This sample also shows a pronounced PL, with the highest blue shifting, of about 12 nm. Nanocrystalline silicon, with the smallest nanocrystallite size, confirmed by our Raman analyses using microcrystal model (MCM), should be responsible for both the highest Raman peak shift and PL blue shift due to quantum confinement effect (QCE).

Local Stress-strain Structure in CVD Diamond Observed by Raman Peak-shift Mapping

ABSTRACTSemiconductor epitaxial CVD single crystal diamond is considered a potential material for power devices because of its unique characteristics. In the discussion on the relationship between crystal quality and device performance, the atomic purity and defect concentration have been considered; however, the information on the local stress-strain distribution in a single crystal is not sufficient. In this paper, the local stress-strain distribution of the epitaxial CVD single crystal diamond is quantitatively examined using the birefringence and cathodoluminescence images and the Raman peak-shift map. From the Raman peak-shift map, the local stress-strain is estimated and the stress is found to range from -67 MPa to +160 MPa in the observed area.

Prototype of Illumination-Collection Mode Scanning Near-Field Optical Microscopy and Raman Spectroscopy with Gold Inner-Coated Aperture-Less Pyramidal Probe

We have prototyped illumination-collection mode scanning near-field optical microscopy (SNOM) and near-field Raman spectroscopy (NFRS) with gold inner-covered aperture-less pyramidal probe in order to study the possibility to detect optical images, and Raman spectrum and Raman peak shift for stress distribution in Si device with high resolution of about 10 nm.

Reorientation of carbon nanotubes in polymer matrix composites using compressive loading

Purified single-walled nanotubes (SWNTs) were dispersed in an epoxy polymer and subjected to uniaxial compressive loading. The orientation and stress in the nanotubes were monitored in situ using polarized Raman microscopy. At strains less than 2%, the nanotubes reorient normal to the direction of compression, thereby minimizing the local strain energy. Above 2% strain, the Raman peak shift reaches a plateau. A new analytical model, which approximates the SWNT reorientation by varying the aspect ratio of a representative spheroid, predicted the rotation behavior of nanotubes under load. The results of this model suggest that the observed plateau of the Raman peak shift is caused by both polymer yielding and interfacial debonding at the ends of nanotubes.