Spatial resolution limit for focused ion-beam lithography from secondary-electron energy measurements

1988 ◽  
Vol 6 (3) ◽  
pp. 986 ◽  
Author(s):  
Masaaki Ando
Keyword(s):  
Electron Energy ◽  
Spatial Resolution ◽  
Secondary Electron ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Resolution Limit ◽  
Ion Beam Lithography

Novel Approach of Improving Secondary Electron Detector in FIB System

2018 ◽  
Author(s):  
Steve Wang ◽  
Jim McGinn ◽  
Peter Tvarozek ◽  
Amir Weiss
Keyword(s):  
Integrated Circuit ◽  
Secondary Electron ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Vital Role ◽  
Electron Detector ◽  
System A ◽  
Novel Approach

Abstract Secondary electron detector (SED) plays a vital role in a focused ion beam (FIB) system. A successful circuit edit requires a good effective detector. Novel approach is presented in this paper to improve the performance of such a detector, making circuit altering for the most advanced integrated circuit (IC) possible.

Microstructures of GaAs fabricated by finely focused ion beam lithography

1989 ◽  
Vol 9 (1-4) ◽  
pp. 277-279 ◽  
Author(s):  
Takao Shiokawa ◽  
Pil Hyon Kim ◽  
Manabu Hamagaki ◽  
Tamio Hara ◽  
Yoshinobu Aoyagi ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Lithography

Boron nitride stamp for ultra-violet nanoimprinting lithography fabricated by focused ion beam lithography

2007 ◽  
Vol 18 (46) ◽  
pp. 465302 ◽  
Author(s):  
Ali Ozhan Altun ◽  
Jun-Ho Jeong ◽  
Jong-Joo Rha ◽  
Ki-Don Kim ◽  
Eung-Sug Lee
Keyword(s):  
Boron Nitride ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ultra Violet ◽  
Ion Beam Lithography

Fabrication of Sub-250nm High Aspect Ratio Apertures by Focused Ion Beam Lithography

2006 ◽  
Vol 983 ◽  
Author(s):  
Todd Simpson ◽  
Ian V Mitchell
Keyword(s):  
Silicon Nitride ◽  
High Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Gold Films ◽  
Ion Beam Lithography ◽  
Diameter Hole ◽  
Sem Imaging ◽  
Aperture Arrays

AbstractAperture arrays were fabricated in 1.0µm thick gold films supported on 20nm thick silicon nitride membranes. Lithographic milling strategies in gold were evaluated through the use of in-situ sectioning and high resolution SEM imaging with the UWO CrossBeam FIB/SEM. A successful strategy for producing a 250nm diameter hole with sidewalls approaching vertical is summarized.

scholarly journals Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 508 ◽  
Author(s):  
Stanislav Tiagulskyi ◽  
Roman Yatskiv ◽  
Hana Faitová ◽  
Šárka Kučerová ◽  
David Roesel ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Zno Nanorods ◽  
Carrier Injection ◽  
Ion Beam Lithography ◽  
Current Voltage ◽  
P Type ◽  
Surface Leakage

We study the effect of thermal annealing on the electrical properties of the nanoscale p-n heterojunctions based on single n-type ZnO nanorods on p-type GaN substrates. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and on the substrates locally patterned by focused ion beam lithography. Electrical properties of single nanorod heterojunctions are measured with a nanoprobe in the vacuum chamber of a scanning electron microscope. The focused ion beam lithography provides a uniform nucleation of ZnO, which results in a uniform growth of ZnO nanorods. The specific configuration of the interface between the ZnO nanorods and GaN substrate created by the focused ion beam suppresses the surface leakage current and improves the current-voltage characteristics. Further improvement of the electrical characteristics is achieved by annealing of the structures in nitrogen, which limits the defect-mediated leakage current and increases the carrier injection efficiency.

Fabrication of Nano- and Micro-Scale UV Imprint Stamp Using Diamond-Like Carbon Coating Technology

2006 ◽  
Vol 6 (11) ◽  
pp. 3619-3623
Author(s):  
Eung-Sug Lee ◽  
Jun-Ho Jeong ◽  
Ki-Don Kim ◽  
Young-Suk Sim ◽  
Dae-Geun Choi ◽  
...  
Keyword(s):  
Nanoimprint Lithography ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Adhesive Layer ◽  
Diamond Like Carbon ◽  
Coating Process ◽  
Ion Beam Lithography ◽  
Two Photon ◽  
Dlc Coating ◽  
Two Photon Polymerization

Two-dimensional (2-D) and three-dimensional (3-D) diamond-like carbon (DLC) stamps for ultraviolet nanoimprint lithography were fabricated with two methods: namely, a DLC coating process, followed by focused ion beam lithography; and two-photon polymerization patterning, followed by nanoscale-thick DLC coating. We used focused ion beam lithography to fabricate 70 nm deep lines with a width of 100 nm, as well as 70 nm deep lines with a width of 150 nm, on 100 nm thick DLC layers coated on quartz substrates. We also used two-photon polymerization patterning and a DLC coating process to successfully fabricate 200 nm wide lines, as well as 3-D rings with a diameter of 1.35 μm and a height of 1.97 μm, and a 3-D cone with a bottom diameter of 2.88 μm and a height of 1.97 μm. The wafers were successfully printed on an UV-NIL using the DLC stamps without an anti-adhesive layer. The correlation between the dimensions of the stamp's features and the corresponding imprinted features was excellent.

scholarly journals Comparative study of plasmonic antennas fabricated by electron beam and focused ion beam lithography

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Michal Horák ◽  
Kristýna Bukvišová ◽  
Vojtěch Švarc ◽  
Jiří Jaskowiec ◽  
Vlastimil Křápek ◽  
...  
Keyword(s):  
Electron Beam ◽  
Comparative Study ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Lithography

Localized High-Resolution Stress Measurements on MEMS Structures

2009 ◽  
Author(s):  
Dietmar Vogel ◽  
Astrid Gollhardt ◽  
Bernd Michel
Keyword(s):  
Raman Spectroscopy ◽  
High Resolution ◽  
Spatial Resolution ◽  
Focused Ion Beam ◽  
Stress Measurement ◽  
Ion Beam ◽  
Stress Relief ◽  
Stokes Line ◽  
Stress Measurements ◽  
Electron Backscattering

Three different methods of stress measurement with strong spatial resolution are presented. They base on stress relief techniques caused by focused ion beam milling, on altered electron backscattering by deformed lattices and on Stokes line shift measurements by Raman spectroscopy. The capability of these methods is demonstrated by their application to typical MEMS structures. A comparison between the methods is performed in order to outline potentials and limitations.

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