EB60: An advanced direct wafer exposure electron-beam lithography system for high-throughput, high-precision, submicron pattern writing

1987 ◽  
Vol 5 (1) ◽  
pp. 61 ◽  
Author(s):  
Minpei Fujinami
Keyword(s):  
Electron Beam ◽  
High Precision ◽  
High Throughput ◽  
Electron Beam Lithography ◽  
Lithography System

Electron-beam lithography system for high-precision reticle making

1992 ◽  
Author(s):  
Takashi Matsuzaka ◽  
Hiroya Ohta ◽  
Norio Saitou ◽  
Katsuhiro Kawasaki ◽  
Kazumitsu Nakamura ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Precision ◽  
Electron Beam Lithography ◽  
Lithography System

A Large Range Compliant Nano-Manipulator Supporting Electron Beam Lithography

2022 ◽  
pp. 1-48
Author(s):  
Yijie Liu ◽  
Zhen Zhang
Keyword(s):  
Electron Beam ◽  
Natural Frequency ◽  
High Precision ◽  
Electron Beam Lithography ◽  
Optimization Design ◽  
Large Range ◽  
Direct Write ◽  
Motion Stage ◽  
Cross Axis ◽  
Precision Motion

Abstract Electron beam lithography (EBL) is an important lithographic process of scanning a focused electron beam (e-beam) to direct write a custom pattern with nanometric accuracy. Due to the very limited field of the focused election beam, a motion stage is needed to move the sample to the e-beam field for processing large patterns. In order to eliminate the stitching error induced by the existing “step and scan” process, we in this paper propose a large range compliant nano-manipulator so that the manipulator and the election beam can be moved in a simultaneous manner. We also present an optimization design for the geometric parameters of the compliant manipulator under the vacuum environment. Experimental results demonstrate 1 mm × 1 mm travel range with high linearity, ~ 0.5% cross-axis error and 5 nm resolution. Moreover, the high natural frequency (~ 56 Hz) of the manipulator facilitates it to achieve high-precision motion of EBL.

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