Gallium arsenide and aluminum gallium arsenide reactive ion etching in boron trichloride/argon mixtures

1987 ◽  
Vol 5 (6) ◽  
pp. 1599 ◽  
Author(s):  
A. Scherer
Keyword(s):  
Gallium Arsenide ◽  
Aluminum Gallium Arsenide ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Boron Trichloride

Radiation damage of gallium arsenide induced by reactive ion etching

1987 ◽  
Vol 62 (10) ◽  
pp. 4109-4113 ◽  
Author(s):  
Tohru Hara ◽  
Hidenori Suzuki ◽  
Akio Suga ◽  
Toshiyuki Terada ◽  
Nobuyuki Toyoda
Keyword(s):  
Gallium Arsenide ◽  
Radiation Damage ◽  
Reactive Ion Etching ◽  
Ion Etching

Assessment of Surface Damage of Gallium Arsenide due to Reactive Ion Etching

1990 ◽  
Vol 190 ◽  
Author(s):  
M. S. Puttock ◽  
H. Thomas ◽  
D. V. Morgan ◽  
U. Rossow ◽  
D. R. T. Zahn ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Reactive Ion Etching ◽  
Surface Damage ◽  
Ion Etching

scholarly journals Surface morphology after reactive ion etching of silicon and gallium arsenide based solar cells

2018 ◽  
Vol 1124 ◽  
pp. 041015 ◽  
Author(s):  
N Papež ◽  
D Sobola ◽  
A Gajdoš ◽  
Ľ Škvarenina ◽  
R Macků ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Solar Cells ◽  
Surface Morphology ◽  
Reactive Ion Etching ◽  
Ion Etching

A Process Model for Reactive Ion Etching and Study of the Effects of Magnetron Enhancement

1989 ◽  
Vol 158 ◽  
Author(s):  
M. Meyyappan ◽  
R. C. Buggeln
Keyword(s):  
Process Model ◽  
Reactive Ion Etching ◽  
Low Pressure ◽  
Ion Etching ◽  
Flow Rates ◽  
Boron Trichloride ◽  
Simulation Results ◽  
Etch Rates ◽  
Present Simulation

ABSTRACTMagnetron reactive ion etching has been receiving much attention since it offers low pressure, and low bias etching conditions with little damage. We have developed a process model for this process and present simulation results for boron trichloride etching of GaAs. The computed etch rates are uniform in the center with higher rates at the edges of the wafer. Flow rates and pressure can be optimized to improve uniformity. The etch rates with the aid of the magnetron are shown to be higher than the rates tor conventional reactive ion etching.

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching
Sign in / Sign up

Export Citation Format

Share Document