Summary Abstract: A study of gallium arsenide and aluminum gallium arsenide reactive ion etching parameters

1987 ◽  
Vol 5 (4) ◽  
pp. 1604-1605 ◽  
Author(s):  
A. Scherer ◽  
E. Beebe ◽  
H. G. Craighead
Keyword(s):  
Gallium Arsenide ◽  
Aluminum Gallium Arsenide ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Etching Parameters

Radiation damage of gallium arsenide induced by reactive ion etching

1987 ◽  
Vol 62 (10) ◽  
pp. 4109-4113 ◽  
Author(s):  
Tohru Hara ◽  
Hidenori Suzuki ◽  
Akio Suga ◽  
Toshiyuki Terada ◽  
Nobuyuki Toyoda
Keyword(s):  
Gallium Arsenide ◽  
Radiation Damage ◽  
Reactive Ion Etching ◽  
Ion Etching

Optimization of Reactive Ion Etching Parameters Via Material Characterization

1990 ◽  
Vol 201 ◽  
Author(s):  
M. W. Cole ◽  
C. B. Cooper ◽  
M. Dutta ◽  
C. S. Wrenn ◽  
S. Saliman ◽  
...  
Keyword(s):  
Power Level ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Time Period ◽  
Lattice Damage ◽  
High Power Level ◽  
Etching Parameters ◽  
Etched Surface ◽  
Short Time ◽  
Surface Morphologies

AbstractThis study evaluates variations in SiCl4 reactive ion etching (RIE) process parameters in order to optimize the fabrication of lateral quantum well arrays (QWA) used in III–V semiconductor laser and detector designs. Since fabrication involves MBE regrowth on SiCl4 etched surfaces, material quality of both the etched surface and GaAs regrowth are evaluated. The variation of RIE parameters involved power levels, DC bias and etch times (10 Watts, -30V, 8 min.; 25 Watts, -100V, 5 min.; 95 Watts,-340V, 2 min.) while material removal was held constant (400nm). Evaluation of the etched surfaces revealed that the lattice damage depth exceeded lOOnm for all power levels. The extent of disorder beneath the etched surface was less for the low power long etch time. Etching at higher power levels for shorter time periods resulted in smoother surfaces and enhanced electrical characteristics, which in turn yielded a higher quality GaAs regrowth region. For the RIE parameters examined in this study, the variation in defect densities seemed to have a lesser effect on device performance as compared to the extreme differences in surface morphologies. Thus, for the parameters evaluated in this work, we suggest that QWA fabrication is optimized via SiClif RIE at the high power level for a short time period.

Highly Controllable Nano-texturing of Silicon Using Hydrogen-assisted Reactive Ion Etching

2010 ◽  
Vol 1258 ◽  
Author(s):  
Mahdieh Mehran ◽  
Zeinab Sanaee ◽  
Shamsoddin Mohajerzadeh
Keyword(s):  
Silicon Surface ◽  
Oil Spills ◽  
Reactive Ion Etching ◽  
Rf Plasma ◽  
Silicon Substrates ◽  
Gas Flows ◽  
Plasma Power ◽  
Etching Technique ◽  
Ion Etching ◽  
Etching Parameters

AbstractWe propose a hydrogen assisted reactive ion etching method for generating nano-grass and nano-texturing of silicon substrates in desirable shapes and locations. The etching technique is based on sequential etching and passivation steps where a combination of three gases of H2, O2 and SF6 in the presence of RF plasma is exploited. Using this method it has been possible to realize high aspect ratio features on silicon substrates whereas by adjusting the etching parameters, it is possible to form texturing of silicon in desired places. This technique is highly programmable where the pressure, gas flows, plasma power and duration of each cycle can be preset to achieve desired features. The formation of nano-grass on the silicon surface improves its wetability both to water and oil spills.

Assessment of Surface Damage of Gallium Arsenide due to Reactive Ion Etching

1990 ◽  
Vol 190 ◽  
Author(s):  
M. S. Puttock ◽  
H. Thomas ◽  
D. V. Morgan ◽  
U. Rossow ◽  
D. R. T. Zahn ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Reactive Ion Etching ◽  
Surface Damage ◽  
Ion Etching
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