Summary Abstract: Ge/Si heterojunction Ohmic contacts formed by molecular beam epitaxy

1986 ◽  
Vol 4 (2) ◽  
pp. 661
Author(s):  
M. J. Hafich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contacts ◽  
Molecular Beam

scholarly journals Very low resistance nonalloyed ohmic contacts using low‐temperature molecular beam epitaxy of GaAs

1995 ◽  
Vol 66 (11) ◽  
pp. 1412-1414 ◽  
Author(s):  
M. P. Patkar ◽  
T. P. Chin ◽  
J. M. Woodall ◽  
M. S. Lundstrom ◽  
M. R. Melloch
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Low Resistance

Ohmic contacts to n‐GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxy

1981 ◽  
Vol 19 (3) ◽  
pp. 626-627 ◽  
Author(s):  
J. M. Woodall ◽  
J. L. Freeouf ◽  
G. D. Pettit ◽  
T. Jackson ◽  
P. Kirchner
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Graded Band Gap

Study of Ohmic Contacts on P-Type ZnSe and ZnSe Epitaxial Layers Grown by Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
C. Piskoti ◽  
B. Mykolajenko ◽  
M. Vaziri
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Metal Contact ◽  
Epitaxial Layers ◽  
Preliminary Results ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

ABSTRACTTo study the formation of ohmic contacts, several metals have been deposited on p-types ZnTe and ZnSe epitaxial layers. The metals were deposited on the layers either by simple evaporation or by electroplating. The current-voltage characteristics associated with each metal contact were measured. The preliminary results of these measurements indicate that electroplating is a better technique for making ohmic contact to these layers.

Nonalloyed Ohmic contacts ton‐GaAs by molecular beam epitaxy

1978 ◽  
Vol 33 (7) ◽  
pp. 651-653 ◽  
Author(s):  
P. A. Barnes ◽  
A. Y. Cho
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contacts ◽  
Molecular Beam

Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy

2012 ◽  
Vol 101 (3) ◽  
pp. 032109 ◽  
Author(s):  
Faiza Afroz Faria ◽  
Jia Guo ◽  
Pei Zhao ◽  
Guowang Li ◽  
Prem Kumar Kandaswamy ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Low Resistance ◽  
Si Doping

Low-Resistivity Non-Alloyed Ohmic Contacts to p- and n-Gaas Using In-Situ Integrated Process

1994 ◽  
Vol 337 ◽  
Author(s):  
M. Hong ◽  
D. Vakhshoori ◽  
J. P. Mannaerts ◽  
J. Kwo
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Integrated System ◽  
Integrated Process ◽  
Low Resistivity ◽  
Uniform Doping

ABSTRACTVery low-resistivity non-alloyed ohmic contacts (Rc) to both p- and n-GaAs were realized using molecular beam epitaxy (MBE) in a vacuum integrated system. Three different metals of Au, Ag, and Nb were in-situ deposited on (1) p+-GaAs which was heavily Be-doped either in a uniform doping or with a 5-doping scheme; and (2) n+-GaAs which was doped in a 5-pair Si δ-doping with a spacer GaAs-Si 2.5 nm thick. In both cases, low Rc values of ≤ (1-5) x 10-7 Ω-cm2 were achieved.

Heavy doping with Sn of GaAs layers grown by molecular beam epitaxy for non-alloyed ohmic contacts

1988 ◽  
Vol 38 (2) ◽  
pp. 224-230 ◽  
Author(s):  
M. Láznička ◽  
P. Trung Dung ◽  
J. Oswald ◽  
V. Vorlíček ◽  
I. Gregora ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Heavy Doping
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