scholarly journals Very low resistance nonalloyed ohmic contacts using low‐temperature molecular beam epitaxy of GaAs

1995 ◽  
Vol 66 (11) ◽  
pp. 1412-1414 ◽  
Author(s):  
M. P. Patkar ◽  
T. P. Chin ◽  
J. M. Woodall ◽  
M. S. Lundstrom ◽  
M. R. Melloch
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Low Resistance

Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy

2012 ◽  
Vol 101 (3) ◽  
pp. 032109 ◽  
Author(s):  
Faiza Afroz Faria ◽  
Jia Guo ◽  
Pei Zhao ◽  
Guowang Li ◽  
Prem Kumar Kandaswamy ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Low Resistance ◽  
Si Doping

High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy

2010 ◽  
Vol 97 (19) ◽  
pp. 192501 ◽  
Author(s):  
Y. Maeda ◽  
K. Hamaya ◽  
S. Yamada ◽  
Y. Ando ◽  
K. Yamane ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
High Quality

Local structures around Er atoms doped in GaAs by low-temperature molecular beam epitaxy

2003 ◽  
Vol 6 (5-6) ◽  
pp. 425-427 ◽  
Author(s):  
K. Ogawa ◽  
H. Ofuchi ◽  
H. Maki ◽  
T. Sonoyama ◽  
D. Inoue ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Local Structures

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

1991 ◽  
Vol 69 (11) ◽  
pp. 7942-7944 ◽  
Author(s):  
K. T. Shiralagi ◽  
R. A. Puechner ◽  
K. Y. Choi ◽  
R. Droopad ◽  
G. N. Maracas
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Gas Source

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

Highly mismatched N-rich GaN1−xSbx films grown by low temperature molecular beam epitaxy

2013 ◽  
Vol 102 (10) ◽  
pp. 102104 ◽  
Author(s):  
K. M. Yu ◽  
W. L. Sarney ◽  
S. V. Novikov ◽  
D. Detert ◽  
R. Zhao ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam
Sign in / Sign up

Export Citation Format

Share Document