Pressure dependence of GaAs/AlxGa1−xAs quantum-well bound states: The determination of valence-band offsets

1986 ◽  
Vol 4 (4) ◽  
pp. 1043 ◽  
Author(s):  
D. J. Wolford
Keyword(s):  
Quantum Well ◽  
Valence Band ◽  
Pressure Dependence ◽  
Bound States ◽  
Band Offsets

A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Koteies
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Accurate Determination ◽  
Energy Difference ◽  
Spectroscopic Technique ◽  
Band Offsets ◽  
Band Energy ◽  
Semiconductor Quantum Wells ◽  
Sensitive Function

ABSTRACTWe have developed a novel experimental technique for accurately determining band offsets in semiconductor quantum wells (QW). It is based on the fact that the ground state heavy- hole (HH) band energy is more sensitive to the depth of the valence band well than the light-hole (LH) band energy. Further, it is well known that as a function of the well width, Lz, the energy difference between the LH and HH excitons in a lattice matched, unstrained QW system experiences a maximum. Calculations show that the position, and more importantly, the magnitude of this maximum is a sensitive function of the valence band offset, Qy, which determines the depth of the valence band well. By fitting experimentally measured LH-HH splittings as a function of Lz, an accurate determination of band offsets can be derived. We further reduce the experimental uncertainty by plotting LH-HH as a function of HH energy (which is a function of Lz ) rather than Lz itself, since then all of the relevant parameters can be precisely determined from absorption spectroscopy alone. Using this technique, we have derived the conduction band offsets for several material systems and, where a consensus has developed, have obtained values in good agreement with other determinations.

Determination of the valence band offsets at HfO2 /InN(0001) and InN/In0.3 Ga0.7 N(0001) heterojunctions using X-ray photoelectron spectroscopy

2010 ◽  
Vol 207 (6) ◽  
pp. 1335-1337 ◽  
Author(s):  
Anja Eisenhardt ◽  
Andreas Knübel ◽  
Ralf Schmidt ◽  
Marcel Himmerlich ◽  
Joachim Wagner ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offsets ◽  
X Ray

Staggered band alignments in AlGaAs heterojunctions and the determination of valence‐band offsets

1986 ◽  
Vol 48 (8) ◽  
pp. 541-543 ◽  
Author(s):  
P. Dawson ◽  
B. A. Wilson ◽  
C. W. Tu ◽  
R. C. Miller
Keyword(s):  
Valence Band ◽  
Band Offsets ◽  
Band Alignments

scholarly journals Experimental determination of the valence band offsets of ZnGeN2 and (ZnGe)0.94Ga0.12N2 with GaN

2021 ◽  
Vol 54 (24) ◽  
pp. 245102
Author(s):  
Md Rezaul Karim ◽  
Brenton A Noesges ◽  
Benthara Hewage Dinushi Jayatunga ◽  
Menglin Zhu ◽  
Jinwoo Hwang ◽  
...  
Keyword(s):  
Experimental Determination ◽  
Valence Band ◽  
Band Offsets

Pressure dependence of the valence-band discontinuity in GaAs/AlAs and GaAs/AlxGa1−xAs quantum-well structures

1989 ◽  
Vol 39 (8) ◽  
pp. 5546-5549 ◽  
Author(s):  
J. D. Lambkin ◽  
A. R. Adams ◽  
D. J. Dunstan ◽  
P. Dawson ◽  
C. T. Foxon
Keyword(s):  
Quantum Well ◽  
Valence Band ◽  
Pressure Dependence ◽  
Quantum Well Structures ◽  
Valence Band Discontinuity

The pressure dependence of the valence band discontinuity in quantum well structures

1990 ◽  
Vol 3 (1-6) ◽  
pp. 57-59 ◽  
Author(s):  
V. A. Wilkinson ◽  
J. D. Lambkin ◽  
A. D. Prins ◽  
D. J. Dunstan
Keyword(s):  
Quantum Well ◽  
Valence Band ◽  
Pressure Dependence ◽  
Quantum Well Structures ◽  
Valence Band Discontinuity

Determination of band offsets and subband levels for a GaInP/AlGaInP quantum well by photoreflectance using a InGaP laser diode

2009 ◽  
Vol 6 (6) ◽  
pp. 1517-1519 ◽  
Author(s):  
Wataru Susaki ◽  
Shinichi Kakuda ◽  
Takahiro Igawa ◽  
Takeshi Inada ◽  
Akihiro Tomioka
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Band Offsets
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