Accuracy of zero-charge and zero-dipole approximations for the determination of valence-band offsets at semiconductor heterojunctions

1988 ◽  
Vol 6 (4) ◽  
pp. 1290 ◽  
Author(s):  
C. Priester
Keyword(s):  
Valence Band ◽  
Band Offsets ◽  
Zero Charge ◽  
Semiconductor Heterojunctions

A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Koteies
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Accurate Determination ◽  
Energy Difference ◽  
Spectroscopic Technique ◽  
Band Offsets ◽  
Band Energy ◽  
Semiconductor Quantum Wells ◽  
Sensitive Function

ABSTRACTWe have developed a novel experimental technique for accurately determining band offsets in semiconductor quantum wells (QW). It is based on the fact that the ground state heavy- hole (HH) band energy is more sensitive to the depth of the valence band well than the light-hole (LH) band energy. Further, it is well known that as a function of the well width, Lz, the energy difference between the LH and HH excitons in a lattice matched, unstrained QW system experiences a maximum. Calculations show that the position, and more importantly, the magnitude of this maximum is a sensitive function of the valence band offset, Qy, which determines the depth of the valence band well. By fitting experimentally measured LH-HH splittings as a function of Lz, an accurate determination of band offsets can be derived. We further reduce the experimental uncertainty by plotting LH-HH as a function of HH energy (which is a function of Lz ) rather than Lz itself, since then all of the relevant parameters can be precisely determined from absorption spectroscopy alone. Using this technique, we have derived the conduction band offsets for several material systems and, where a consensus has developed, have obtained values in good agreement with other determinations.

Determination of the valence band offsets at HfO2 /InN(0001) and InN/In0.3 Ga0.7 N(0001) heterojunctions using X-ray photoelectron spectroscopy

2010 ◽  
Vol 207 (6) ◽  
pp. 1335-1337 ◽  
Author(s):  
Anja Eisenhardt ◽  
Andreas Knübel ◽  
Ralf Schmidt ◽  
Marcel Himmerlich ◽  
Joachim Wagner ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offsets ◽  
X Ray

Staggered band alignments in AlGaAs heterojunctions and the determination of valence‐band offsets

1986 ◽  
Vol 48 (8) ◽  
pp. 541-543 ◽  
Author(s):  
P. Dawson ◽  
B. A. Wilson ◽  
C. W. Tu ◽  
R. C. Miller
Keyword(s):  
Valence Band ◽  
Band Offsets ◽  
Band Alignments

scholarly journals Experimental determination of the valence band offsets of ZnGeN2 and (ZnGe)0.94Ga0.12N2 with GaN

2021 ◽  
Vol 54 (24) ◽  
pp. 245102
Author(s):  
Md Rezaul Karim ◽  
Brenton A Noesges ◽  
Benthara Hewage Dinushi Jayatunga ◽  
Menglin Zhu ◽  
Jinwoo Hwang ◽  
...  
Keyword(s):  
Experimental Determination ◽  
Valence Band ◽  
Band Offsets

Determination of valence band offsets from Si/Si1−xGex/Si using temperature‐dependent current–voltage characteristics

1996 ◽  
Vol 79 (5) ◽  
pp. 2463-2466 ◽  
Author(s):  
O. Chretien ◽  
A. Souifi ◽  
R. Apetz ◽  
L. Vescan ◽  
H. Lüth ◽  
...  
Keyword(s):  
Valence Band ◽  
Temperature Dependent ◽  
Band Offsets ◽  
Current Voltage ◽  
Current Voltage Characteristics

Theoretical valence band offsets of semiconductor heterojunctions

2002 ◽  
Vol 80 (24) ◽  
pp. 4543-4545 ◽  
Author(s):  
Kyurhee Shim ◽  
Herschel Rabitz
Keyword(s):  
Valence Band ◽  
Band Offsets ◽  
Semiconductor Heterojunctions
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