A study of novel growth approaches to influence the growth mechanism and interface quality in heterostructures grown by molecular beam epitaxy

1986 ◽  
Vol 4 (4) ◽  
pp. 878 ◽  
Author(s):  
Jasprit Singh
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Mechanism ◽  
Molecular Beam ◽  
Interface Quality

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

Growth mechanism of II–VI compound semiconductors by molecular beam epitaxy

1997 ◽  
Vol 175-176 ◽  
pp. 587-592 ◽  
Author(s):  
Hiroyuki Okuyama ◽  
Takayuki Kawasumi ◽  
Akira Ishibashi ◽  
Masao Ikeda
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Mechanism ◽  
Molecular Beam ◽  
Compound Semiconductors

In situInvestigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN

2011 ◽  
Vol 50 ◽  
pp. 01AE02 ◽  
Author(s):  
Ke Wang ◽  
Tomohiro Yamaguchi ◽  
Tsutomu Araki ◽  
Euijoon Yoon ◽  
Yasushi Nanishi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Mechanism ◽  
Molecular Beam

RF-MBE Growth of InN Dots on N-polar GaN Grown on Vicinal c-plane Sapphire

2004 ◽  
Vol 831 ◽  
Author(s):  
Naoki Hashimoto ◽  
Naohiro Kikukawa ◽  
Song-Bek Che ◽  
Yoshihiro Ishitani ◽  
Akihiko Yoshikawa
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Growth Mechanism ◽  
Molecular Beam ◽  
Lattice Relaxation ◽  
Radio Frequency Plasma ◽  
Mbe Growth ◽  
Frequency Plasma ◽  
Nominal Coverage

ABSTRACTWe have grown InN quantum dots (QDs) on nitrogen-polarity (N-polarity) GaN under-layer by the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE), and systematically investigated growth mechanism of the InN dots. The InN QDs with the N-polarity could be grown at about 500°C, which was much higher than that of previous reports on InN dots grown by MBE. When the nominal coverage of InN became more than 1 mono-layer (ML), lattice relaxation of InN occurred and high density InN dots were uniformly formed. These results indicated that InN dots were formed by Stranski-Krastanov (S-K) growth mode. For the InN deposition above about 8ML, InN dots tended to coalesce and resulted in remarakable decrease of the dots density.

Initial growth mechanism of AlAs on Si(111) by molecular beam epitaxy

1991 ◽  
Vol 59 (23) ◽  
pp. 2983-2985 ◽  
Author(s):  
T. Kawai ◽  
H. Yonezu ◽  
Y. Yamauchi ◽  
Y. Takano ◽  
K. Pak
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Mechanism ◽  
Molecular Beam ◽  
Initial Growth
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