Initial growth mechanism of AlAs on Si(111) by molecular beam epitaxy

1991 ◽  
Vol 59 (23) ◽  
pp. 2983-2985 ◽  
Author(s):  
T. Kawai ◽  
H. Yonezu ◽  
Y. Yamauchi ◽  
Y. Takano ◽  
K. Pak
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Mechanism ◽  
Molecular Beam ◽  
Initial Growth

scholarly journals Screw-Dislocation-Driven Growth Mode in Two Dimensional GaSe on GaAs(001) Substrates Grown by Molecular Beam Epitaxy

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Nhu Quynh Diep ◽  
Cheng-Wei Liu ◽  
Ssu-Kuan Wu ◽  
Wu-Ching Chou ◽  
Sa Hoang Huynh ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Screw Dislocation ◽  
Growth Mechanism ◽  
Molecular Beam ◽  
Second Harmonic ◽  
Three Dimensional ◽  
Molecular Beam Epitaxy Growth ◽  
Initial Growth ◽  
Two Dimensional ◽  
Pretreatment Period

AbstractRegardless of the dissimilarity in the crystal symmetry, the two-dimensional GaSe materials grown on GaAs(001) substrates by molecular beam epitaxy reveal a screw-dislocation-driven growth mechanism. The spiral-pyramidal structure of GaSe multi-layers was typically observed with the majority in ε-phase. Comprehensive investigations on temperature-dependent photoluminescence, Raman scattering, and X-ray diffraction indicated that the structure has been suffered an amount of strain, resulted from the screw-dislocation-driven growth mechanism as well as the stacking disorders between monolayer at the boundaries of the GaSe nanoflakes. In addition, Raman spectra under various wavelength laser excitations explored that the common ε-phase of 2D GaSe grown directly on GaAs can be transformed into the β-phase by introducing a Se-pretreatment period at the initial growth process. This work provides an understanding of molecular beam epitaxy growth of 2D materials on three-dimensional substrates and paves the way to realize future electronic and optoelectronic heterogeneous integrated technology as well as second harmonic generation applications.

A study of initial growth mechanism of c-GaN on GaAs(100) by molecular beam epitaxy

1998 ◽  
Vol 189-190 ◽  
pp. 406-410 ◽  
Author(s):  
Ryuhei Kimura ◽  
Yutaka Gotoh ◽  
Tomonori Nagai ◽  
Yasutaka Uchida ◽  
Takeo Matsuzawa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Mechanism ◽  
Molecular Beam ◽  
Initial Growth

Effect of As4overpressure on initial growth of gallium arsenide on silicon by molecular beam epitaxy

1989 ◽  
Vol 55 (10) ◽  
pp. 990-992 ◽  
Author(s):  
J. E. Palmer ◽  
G. Burns ◽  
C. G. Fonstad ◽  
C. V. Thompson
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Initial Growth

Growth mechanism of II–VI compound semiconductors by molecular beam epitaxy

1997 ◽  
Vol 175-176 ◽  
pp. 587-592 ◽  
Author(s):  
Hiroyuki Okuyama ◽  
Takayuki Kawasumi ◽  
Akira Ishibashi ◽  
Masao Ikeda
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Mechanism ◽  
Molecular Beam ◽  
Compound Semiconductors

In situInvestigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN

2011 ◽  
Vol 50 ◽  
pp. 01AE02 ◽  
Author(s):  
Ke Wang ◽  
Tomohiro Yamaguchi ◽  
Tsutomu Araki ◽  
Euijoon Yoon ◽  
Yasushi Nanishi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Mechanism ◽  
Molecular Beam

RF-MBE Growth of InN Dots on N-polar GaN Grown on Vicinal c-plane Sapphire

2004 ◽  
Vol 831 ◽  
Author(s):  
Naoki Hashimoto ◽  
Naohiro Kikukawa ◽  
Song-Bek Che ◽  
Yoshihiro Ishitani ◽  
Akihiko Yoshikawa
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Growth Mechanism ◽  
Molecular Beam ◽  
Lattice Relaxation ◽  
Radio Frequency Plasma ◽  
Mbe Growth ◽  
Frequency Plasma ◽  
Nominal Coverage

ABSTRACTWe have grown InN quantum dots (QDs) on nitrogen-polarity (N-polarity) GaN under-layer by the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE), and systematically investigated growth mechanism of the InN dots. The InN QDs with the N-polarity could be grown at about 500°C, which was much higher than that of previous reports on InN dots grown by MBE. When the nominal coverage of InN became more than 1 mono-layer (ML), lattice relaxation of InN occurred and high density InN dots were uniformly formed. These results indicated that InN dots were formed by Stranski-Krastanov (S-K) growth mode. For the InN deposition above about 8ML, InN dots tended to coalesce and resulted in remarakable decrease of the dots density.

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