Summary Abstract: Double heterostructure optoelectronic switching devices using molecular beam epitaxy

1986 ◽  
Vol 4 (2) ◽  
pp. 603 ◽  
Author(s):  
G. W. Taylor
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Double Heterostructure ◽  
Optoelectronic Switching ◽  
Switching Devices

The reliability of (AlGa)As double‐heterostructure lasers grown by molecular beam epitaxy

1981 ◽  
Vol 39 (9) ◽  
pp. 683-685 ◽  
Author(s):  
W. T. Tsang ◽  
R. L. Hartman ◽  
B. Schwartz ◽  
P. E. Fraley ◽  
W. R. Holbrook
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Double Heterostructure

Mid-infrared (λ=2.775 µm) injection laser based on AlGaAsSb/InAs/CdMgSe hybrid double heterostructure grown by molecular-beam epitaxy

2003 ◽  
Vol 37 (6) ◽  
pp. 736-739
Author(s):  
S. V. Ivanov ◽  
K. D. Moiseev ◽  
V. A. Kaigorodov ◽  
V. A. Solov’ev ◽  
S. V. Sorokin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Injection Laser ◽  
Mid Infrared ◽  
Double Heterostructure

scholarly journals GaAs Triac-like Triangular Barrier Switch Prepared by Molecular Beam Epitaxy

2001 ◽  
Vol 24 (1) ◽  
pp. 1-11
Author(s):  
M. R. Lef ◽  
K. F. Yarn ◽  
C. C. Chen ◽  
W. R. Chang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Wave Length ◽  
Differential Resistance ◽  
Current Gain ◽  
Switching Device ◽  
Multiplication Process ◽  
Current Voltage ◽  
New Type ◽  
Optoelectronic Switching

A new S-shaped negative differential resistance (NDR) switching device, prepared by molecular beam epitaxy (MBE), has been successfully developed in a GaAs double triangular barrier structure. Symmetrical bidirectional S-shaped NDR characteristics are observed experimentally. The bidirectional current-voltage (I–V) characteristics exhibit a new type of NDR caused by an avalanche multiplication process in reverse biased base-collector region and barrier redistribution. Under a base current injection with respect to the cathode, the device exhibits a conventional transistor with a current gain of 1.2 at room temperature. The experimentally electrical results can be easily understood by an equivalent circuit. In addition, a new optoelectronic switching device is also proposed which may have the potential for bidirectional wave length emission.

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