Optical self‐pulsation behavior of cw (AlGa)As shallow proton‐bombarded and narrow‐striped (5 μm) double‐heterostructure lasers grown by molecular beam epitaxy

W. T. Tsang; W. R. Holbrook; P. E. Fraley

doi:10.1063/1.92554

Optical self‐pulsation behavior of cw (AlGa)As shallow proton‐bombarded and narrow‐striped (5 μm) double‐heterostructure lasers grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.92554 ◽

1981 ◽

Vol 39 (1) ◽

pp. 34-37 ◽

Cited By ~ 3

Author(s):

W. T. Tsang ◽

W. R. Holbrook ◽

P. E. Fraley

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Double Heterostructure

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The preparation of low current-threshold infra-red-visible (0.89-0.72µm) AlxGa1-xAs/AlyGa1-yAs double-heterostructure lasers by molecular beam epitaxy

10.1109/iedm.1979.189551 ◽

1979 ◽

Author(s):

W.T. Tsang

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Double Heterostructure ◽

Infra Red ◽

Current Threshold

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IV-3 GaAs-AlxGa1-xAs double-heterostructure lasers prepared by molecular-beam epitaxy

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1974.18028 ◽

1974 ◽

Vol 21 (11) ◽

pp. 741-741

Author(s):

A.Y. Cho ◽

H.C. Casey

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Double Heterostructure

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The reliability of (AlGa)As double‐heterostructure lasers grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.92868 ◽

1981 ◽

Vol 39 (9) ◽

pp. 683-685 ◽

Cited By ~ 12

Author(s):

W. T. Tsang ◽

R. L. Hartman ◽

B. Schwartz ◽

P. E. Fraley ◽

W. R. Holbrook

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Double Heterostructure

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Continuous room‐temperature operation of GaAs‐AlxGa1−xAs double‐heterostructure lasers prepared by molecular‐beam epitaxy

Applied Physics Letters ◽

10.1063/1.88832 ◽

1976 ◽

Vol 28 (9) ◽

pp. 501-503 ◽

Cited By ~ 70

Author(s):

A. Y. Cho ◽

R. W. Dixon ◽

H. C. Casey ◽

R. L. Hartman

Keyword(s):

Molecular Beam Epitaxy ◽

Room Temperature ◽

Molecular Beam ◽

Double Heterostructure ◽

Room Temperature Operation

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Mid-infrared (λ=2.775 µm) injection laser based on AlGaAsSb/InAs/CdMgSe hybrid double heterostructure grown by molecular-beam epitaxy

Semiconductors ◽

10.1134/1.1582546 ◽

2003 ◽

Vol 37 (6) ◽

pp. 736-739

Author(s):

S. V. Ivanov ◽

K. D. Moiseev ◽

V. A. Kaigorodov ◽

V. A. Solov’ev ◽

S. V. Sorokin ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Injection Laser ◽

Mid Infrared ◽

Double Heterostructure

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Molecular beam epitaxy grown 0.6 eV n∕p∕n InPAs∕InGaAs∕InAlAs double heterostructure thermophotovoltaic devices using carbon as the p-type dopant

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2192535 ◽

2006 ◽

Vol 24 (3) ◽

pp. 1626 ◽

Cited By ~ 3

Author(s):

Bernard Wernsman ◽

Thomas Bird ◽

Michael Sheldon ◽

Samuel Link ◽

Rebecca Wehrer

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Double Heterostructure ◽

P Type

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Summary Abstract: Hot-electron transport in the AlSb/InAs/GaSb double heterostructure prepared by molecular-beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584387 ◽

1988 ◽

Vol 6 (2) ◽

pp. 674 ◽

Cited By ~ 3

Author(s):

T. H. Chiu

Keyword(s):

Electron Transport ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Hot Electron ◽

Double Heterostructure ◽

Hot Electron Transport

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cw electro‐optical characteristics and preliminary reliability of double‐heterostructure GaAs‐AlxGa1−xAs lasers grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.91800 ◽

1980 ◽

Vol 37 (2) ◽

pp. 141-144 ◽

Cited By ~ 13

Author(s):

W. T. Tsang ◽

R. L. Hartman ◽

H. E. Elder ◽

W. R. Holbrook

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Optical Characteristics ◽

Double Heterostructure

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HgCdTe double heterostructure injection laser grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.106332 ◽

1991 ◽

Vol 59 (9) ◽

pp. 1022-1024 ◽

Cited By ~ 57

Author(s):

M. Zandian ◽

J. M. Arias ◽

R. Zucca ◽

R. V. Gil ◽

S. H. Shin

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Injection Laser ◽

Double Heterostructure

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Influence of growth conditions on the threshold current density of double-heterostructure lasers prepared by molecular-beam epitaxy

Electronics Letters ◽

10.1049/el:19800053 ◽

1980 ◽

Vol 16 (2) ◽

pp. 72 ◽

Cited By ~ 32

Author(s):

A.Y. Cho ◽

H.C. Casey ◽

C. Radice ◽

P.W. Foy

Keyword(s):

Molecular Beam Epitaxy ◽

Current Density ◽

Molecular Beam ◽

Threshold Current ◽

Growth Conditions ◽

Threshold Current Density ◽

Double Heterostructure

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Optical self‐pulsation behavior of cw (AlGa)As shallow proton‐bombarded and narrow‐striped (5 μm) double‐heterostructure lasers grown by molecular beam epitaxy

The preparation of low current-threshold infra-red-visible (0.89-0.72&#181;m) AlxGa1-xAs/AlyGa1-yAs double-heterostructure lasers by molecular beam epitaxy

IV-3 GaAs-AlxGa1-xAs double-heterostructure lasers prepared by molecular-beam epitaxy

The reliability of (AlGa)As double‐heterostructure lasers grown by molecular beam epitaxy

Continuous room‐temperature operation of GaAs‐AlxGa1−xAs double‐heterostructure lasers prepared by molecular‐beam epitaxy

Mid-infrared (λ=2.775 µm) injection laser based on AlGaAsSb/InAs/CdMgSe hybrid double heterostructure grown by molecular-beam epitaxy

Molecular beam epitaxy grown 0.6 eV n∕p∕n InPAs∕InGaAs∕InAlAs double heterostructure thermophotovoltaic devices using carbon as the p-type dopant

Summary Abstract: Hot-electron transport in the AlSb/InAs/GaSb double heterostructure prepared by molecular-beam epitaxy

cw electro‐optical characteristics and preliminary reliability of double‐heterostructure GaAs‐AlxGa1−xAs lasers grown by molecular beam epitaxy

HgCdTe double heterostructure injection laser grown by molecular beam epitaxy

Influence of growth conditions on the threshold current density of double-heterostructure lasers prepared by molecular-beam epitaxy

The preparation of low current-threshold infra-red-visible (0.89-0.72µm) AlxGa1-xAs/AlyGa1-yAs double-heterostructure lasers by molecular beam epitaxy