Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

Harm C. M. Knoops; K. de Peuter; W. M. M. Kessels

doi:10.1063/1.4926366

Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

Applied Physics Letters ◽

10.1063/1.4926366 ◽

2015 ◽

Vol 107 (1) ◽

pp. 014102 ◽

Cited By ~ 40

Author(s):

Harm C. M. Knoops ◽

K. de Peuter ◽

W. M. M. Kessels

Keyword(s):

Silicon Nitride ◽

Atomic Layer Deposition ◽

Residence Time ◽

Atomic Layer ◽

Nitride Film ◽

Silicon Nitride Film ◽

Layer Deposition

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Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition

Solid-State Electronics ◽

10.1016/j.sse.2017.04.005 ◽

2017 ◽

Vol 133 ◽

pp. 10-16 ◽

Cited By ~ 7

Author(s):

Pei-Ci Jhang ◽

Chi-Pin Lu ◽

Jung-Yu Shieh ◽

Ling-Wu Yang ◽

Tahone Yang ◽

...

Keyword(s):

Silicon Nitride ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Nitride Film ◽

Silicon Nitride Film ◽

Layer Deposition

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Evaluation of Silicon Nitride Film Formed by Atomic Layer Deposition on the Silicon Substrate with Trench Structure Using Angle-Resolved Hard X-ray Photoelectron Spectroscopy

ECS Meeting Abstracts ◽

10.1149/ma2020-02141387mtgabs ◽

2020 ◽

Vol MA2020-02 (14) ◽

pp. 1387-1387

Author(s):

Tapei Nishihara ◽

Ryo Yokogawa ◽

Yuji Otsuki ◽

Munehito Kagaya ◽

Atsushi Ogura

Keyword(s):

Silicon Nitride ◽

Atomic Layer Deposition ◽

Silicon Substrate ◽

Photoelectron Spectroscopy ◽

Atomic Layer ◽

Nitride Film ◽

Silicon Nitride Film ◽

X Ray ◽

Layer Deposition ◽

Trench Structure

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Evaluation of Silicon Nitride Film Formed by Atomic Layer Deposition on the Silicon Substrate with Trench Structure Using Angle-Resolved Hard X-ray Photoelectron Spectroscopy

ECS Transactions ◽

10.1149/09803.0113ecst ◽

2020 ◽

Vol 98 (3) ◽

pp. 113-120

Author(s):

Tapei Nishihara ◽

Ryo Yokogawa ◽

Yuji Otsuki ◽

Munehito Kagaya ◽

Atsushi Ogura

Keyword(s):

Silicon Nitride ◽

Atomic Layer Deposition ◽

Silicon Substrate ◽

Photoelectron Spectroscopy ◽

Atomic Layer ◽

Nitride Film ◽

Silicon Nitride Film ◽

X Ray ◽

Layer Deposition ◽

Trench Structure

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Radical analysis and residence-time effect of silicon nitride atomic layer deposition processes with trisilylamine and NH3 plasmas

Applied Physics Express ◽

10.35848/1882-0786/ab92f2 ◽

2020 ◽

Vol 13 (6) ◽

pp. 066002

Author(s):

Sun Jung Kim ◽

Sang Heon Yong ◽

Heeyeop Chae

Keyword(s):

Silicon Nitride ◽

Atomic Layer Deposition ◽

Residence Time ◽

Atomic Layer ◽

Time Effect ◽

Layer Deposition ◽

Deposition Processes

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Metal–organic atomic-layer deposition of titanium–silicon–nitride films

Applied Physics Letters ◽

10.1063/1.124742 ◽

1999 ◽

Vol 75 (11) ◽

pp. 1521-1523 ◽

Cited By ~ 42

Author(s):

Jae-Sik Min ◽

Hyung-Sang Park ◽

Sang-Won Kang

Keyword(s):

Silicon Nitride ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Silicon Nitride Films ◽

Layer Deposition ◽

Metal Organic ◽

Titanium Silicon Nitride ◽

Titanium Silicon

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Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition

2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/ulis.2016.7440045 ◽

2016 ◽

Cited By ~ 4

Author(s):

Golnaz Karbasian ◽

Alexei O. Orlov ◽

Alexander S. Mukasyan ◽

Gregory L. Snider

Keyword(s):

Silicon Nitride ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Single Electron ◽

Single Electron Transistors ◽

Layer Deposition ◽

Tunnel Barriers ◽

Electron Transistors

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Remote plasma enhanced atomic layer deposition of titanium nitride film using metal organic precursor (C12H23N3Ti) and N2 plasma

Applied Surface Science ◽

10.1016/j.apsusc.2020.148482 ◽

2020 ◽

pp. 148482

Author(s):

Byunguk Kim ◽

Namgue Lee ◽

Junghoon Lee ◽

Taehun Park ◽

Hyunwoo Park ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Titanium Nitride ◽

Atomic Layer ◽

Nitride Film ◽

Remote Plasma ◽

Organic Precursor ◽

Layer Deposition ◽

Metal Organic ◽

Titanium Nitride Film ◽

N2 Plasma

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Resolving self-limiting growth in silicon nitride plasma enhanced atomic layer deposition with tris-dimethylamino silane precursor

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/6.0000493 ◽

2020 ◽

Vol 38 (6) ◽

pp. 062406

Author(s):

Triratna Muneshwar ◽

Ken Cadien

Keyword(s):

Silicon Nitride ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Layer Deposition ◽

Silane Precursor

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A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment

ECS Meeting Abstracts ◽

10.1149/ma2007-02/17/979 ◽

2007 ◽

Keyword(s):

Silicon Nitride ◽

Atomic Layer Deposition ◽

Integrated Circuit ◽

Atomic Layer ◽

Mixed Signal ◽

Layer Deposition

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Challenges with Industrialization of Atomic Layer Deposition of Silicon Nitride

ECS Meeting Abstracts ◽

10.1149/ma2014-02/30/1608 ◽

2014 ◽

Keyword(s):

Silicon Nitride ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Layer Deposition

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