CF4/silicon surface reactions: Evidence for parallel etching mechanisms from modulated ion beam studies

Author(s):  
S. C. McNevin
Author(s):  
U. Kerst ◽  
P. Sadewater ◽  
R. Schlangen ◽  
C. Boit ◽  
R. Leihkauf ◽  
...  

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.


2015 ◽  
Vol 343 ◽  
pp. 56-69 ◽  
Author(s):  
Y.J. Xiao ◽  
F.Z. Fang ◽  
Z.W. Xu ◽  
X.T. Hu

1991 ◽  
Vol 250 (1-3) ◽  
pp. 235-242 ◽  
Author(s):  
Nahomi Aoto ◽  
Eiji Ikawa ◽  
Takamaro Kikkawa ◽  
Yukinori Kurogi

1991 ◽  
Vol 250 (1-3) ◽  
pp. A293
Author(s):  
Nahomi Aoto ◽  
Eiji Ikawa ◽  
Kikkawa Takamaro ◽  
Yukinori Kurogi

1989 ◽  
Vol 7 (3) ◽  
pp. 2143-2146 ◽  
Author(s):  
C. C. Horton ◽  
T. G. Eck ◽  
R. W. Hoffman

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