Pulsed ion beam investigation of the kinetics of surface reactions

1989 ◽  
Vol 7 (3) ◽  
pp. 2143-2146 ◽  
Author(s):  
C. C. Horton ◽  
T. G. Eck ◽  
R. W. Hoffman
Keyword(s):  
Ion Beam ◽  
Surface Reactions ◽  
Kinetics Of

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

scholarly journals Growth kinetics of ion beam sputtered Al-thin films by dynamic scaling theory

2014 ◽  
Vol 573 ◽  
pp. 84-89 ◽  
Author(s):  
Neha Sharma ◽  
K. Prabakar ◽  
S. Dash ◽  
A.K. Tyagi
Keyword(s):  
Thin Films ◽  
Growth Kinetics ◽  
Ion Beam ◽  
Scaling Theory ◽  
Dynamic Scaling ◽  
Kinetics Of

Ion beam analysis of the imidization kinetics of polyamic ethyl ester

Polymer ◽  
1990 ◽  
Vol 31 (3) ◽  
pp. 520-523 ◽  
Author(s):  
S.F. Tead ◽  
E.J. Kramer ◽  
T.P. Russell ◽  
W. Volksen
Keyword(s):  
Ethyl Ester ◽  
Ion Beam ◽  
Ion Beam Analysis ◽  
Beam Analysis ◽  
Kinetics Of

Amorphization Kinetics of Zr (Cr,Fe)2 Under Ion Irradiation

1992 ◽  
Vol 279 ◽  
Author(s):  
A. T. Motta ◽  
L. M. Howe ◽  
P. R. Okamoto
Keyword(s):  
Neutron Irradiation ◽  
Ion Irradiation ◽  
Ion Beam ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Matrix Interface ◽  
Thin Foils ◽  
Intermetallic Precipitates ◽  
Kinetics Of

ABSTRACTThin foils of Zircaloy-4 were irradiated with 350 KeV 40Ar ions in the dual ion beam/HVEM facility at Argonne National Laboratory at 300 – 650 K. The irradiation-induced araorphization of the intermetallic precipitates Zr (Cr, Fe)2 and Zr2 (Ni, Fe) was studied in situ. For Zr (Cr,Fe)2 precipitates the dose-to-amorphization was found to increase exponentially with temperature, with a critical temperature of about 650 K. The amorphization morphology was shown to be homogeneous, with no preferential site for nucleation, in contrast to neutron-irradiation amorphization which started at the precipitate-matrix interface. For Zr2 (Ni,Fe) precipitates it was found that amorphization occurred at 550 K and 600 K, whereas in neutron irradiation no amorphization has been observed at those temperatures. The results are discussed in the context of the previous experimental results of neutron and electron irradiation and likely amorphization mechanisms are proposed.

Changing the Structural State of Amorphous Silicon by Ion Irradiation

1989 ◽  
Vol 157 ◽  
Author(s):  
S. Roorda ◽  
W.C. Sinke ◽  
J.M. Poate ◽  
D.C. Jacobson ◽  
S. Dierker ◽  
...  
Keyword(s):  
Structural Relaxation ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Ion Beams ◽  
Nuclear Collision ◽  
Important Ingredient ◽  
Scanning Calorimetry ◽  
Amorphous Si ◽  
Induced Defects ◽  
Kinetics Of

ABSTRACTIon beams of keV and MeV energies have been used to bombard amorphous Si (a-Si), which had previously been annealed (‘relaxed’). Analysis by Raman spectroscopy and differential scanning calorimetry shows that when 1 out of every 20 Si atoms is displaced by a nuclear collision, the a-Si returns to its unrelaxed state and cannot be distinguished from as implanted a-Si. Moreover, the kinetics of the heat release on annealing of similarly bombarded crystalline Si (c-Si) are qualitatively identical to those of structural relaxation in a-Si. This implies that the population of ion beam induced defects in a-Si is very similar to that in c-Si. It also shows that defect annihilation is an important ingredient in the mechanism of structural relaxation of a-Si.

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