High Speed Integrated Circuit Using Silicon Molecular Beam Epitaxy (Si‐MBE)

1985 ◽  
Vol 132 (10) ◽  
pp. 2481-2486 ◽  
Author(s):  
E. Kasper ◽  
K. Wörner
Keyword(s):  
Molecular Beam Epitaxy ◽  
Integrated Circuit ◽  
High Speed ◽  
Molecular Beam

Progress on Preparation of InAs Nanowires by Molecular Beam Epitaxy

2016 ◽  
Vol 852 ◽  
pp. 349-355
Author(s):  
Ru Xue Li ◽  
Ji Long Tang ◽  
Dang Fang ◽  
Shuang Peng Wang ◽  
Hai Feng Zhao ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Speed ◽  
Molecular Beam ◽  
Light Emission ◽  
Infrared Light ◽  
Dimensional Structure ◽  
Uniform Structure ◽  
Free Standing ◽  
Inas Nanowires ◽  
Low Dimensional

InAs nanowires (NWs) is a key material for high-speed electronics, near-and mid-infrared light emission and detection applications. Much effort has been devoted to the fabrication of InAs NWs and molecular beam epitaxy (MBE) evolved as a powerful method to grow semiconductor nanowires with several interesting features, but it was rarely reported. We present kinds of growths (metal-catalyzed growth, self-catalyzed growth, self-induced free-standing growth, self-induced position-controlled growth, self-assisted nucleation growth etc.) of InAs NWs by MBE, and discuss how to control growth of uniform-structure InAs NWs on homogeneous or heterogeneous substrates, which can provide the reference for the manufacture of low dimensional structure.

Gas-Source Molecular Beam Epitaxy of Electronic Devices

1996 ◽  
Vol 421 ◽  
Author(s):  
E.A. Beam ◽  
B. Brar ◽  
T.P.E. Broekaert ◽  
H.F. Chau ◽  
W. Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Molecular Beam ◽  
Electronic Device ◽  
Field Effect Transistors ◽  
Tunneling Diodes ◽  
Gas Source ◽  
Device Structures ◽  
Double Heterojunction

AbstractGas-source molecular beam epitaxy (GSMBE) has been developed into a useful tool for the growth of both optical and electronic device structures. In this paper, we report on the use of tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) in GSMBE for the growth of electronic device structures with state-of-the-art performance. Device structures based on both the In0.48Ga0.52P/GaAs and In0.53Ga 0.47As/InP lattice matched materials systems are described. The GSMBE system is based on the use of elemental Group-rn sources and employs thermal crackers for precracking TBA and TBP. Dopant sources include both elemental (Sn and Be) and vapor (CBr4 and SiBr4) sources. Device structures fabricated in the In0.48Ga0.52P/GaAs materials system include single- and double- heterojunction bipolar transistors (SHBTs and DHBTs). Device structures fabricated in the In0.53Ga0.47As/InP materials system include SHBTs, DHBTs, heterojunction field effect transistors (HFETs), and both planar and lateral resonant tunneling diodes (RTDs.) Vertically integrated HFET and multi-RTD heterostructures for high speed logic/memory are also described.

High-speed three-dimensional reciprocal-space mapping during molecular beam epitaxy growth of InGaAs

2012 ◽  
Vol 45 (5) ◽  
pp. 1046-1053 ◽  
Author(s):  
Wen Hu ◽  
Hidetoshi Suzuki ◽  
Takuo Sasaki ◽  
Miwa Kozu ◽  
Masamitu Takahasi
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Relaxation Process ◽  
Real Time ◽  
High Speed ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Three Dimensional ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping

This paper describes the development of a high-speed three-dimensional reciprocal-space mapping method designed for the real-time monitoring of the strain relaxation process during the growth of heterostructure semiconductors. Each three-dimensional map is obtained by combining a set of consecutive images, which are captured during the continuous rotation of the sample, and calculating the reciprocal-space coordinates from the detector coordinate system. To demonstrate the feasibility of this rapid mapping technique, the 022 asymmetric diffraction of an InGaAs/GaAs(001) thin film grown by molecular beam epitaxy was measured and the procedure for data calibration was examined. Subsequently, the proposed method was applied to real-time monitoring of the strain relaxation process during the growth of a thin-film heterostructure consisting of In0.07Ga0.93As and In0.18Ga0.82As layers consecutively deposited on GaAs(001). The time resolution of the measurement was 10 s. It was revealed that additional relaxation of the first In0.07Ga0.93As layer was induced by the growth of the second In0.18Ga0.82As layer within a short period of time corresponding to the deposition of only two monolayers of InGaAs.

Strained-layer InGaAs-GaAs-AlGaAs lasers grown by molecular beam epitaxy for high-speed modulation

1991 ◽  
Vol 27 (6) ◽  
pp. 1455-1462 ◽  
Author(s):  
S.D. Offsey ◽  
W.J. Schaff ◽  
L.F. Lester ◽  
L.F. Eastman ◽  
S.K. McKernan
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Speed ◽  
Molecular Beam ◽  
Strained Layer ◽  
Speed Modulation ◽  
High Speed Modulation
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