Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas

2000 ◽  
Vol 18 (4) ◽  
pp. 1220-1224 ◽  
Author(s):  
J. W. Lee ◽  
M. W. Devre ◽  
B. H. Reelfs ◽  
D. Johnson ◽  
J. N. Sasserath ◽  
...  
Keyword(s):  
Dry Etching ◽  
High Density ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas

Cl2-based dry etching of the AlGaInN system in inductively coupled plasmas

1998 ◽  
Vol 42 (12) ◽  
pp. 2277-2281 ◽  
Author(s):  
Hyun Cho ◽  
C.B Vartuli ◽  
C.R Abernathy ◽  
S.M Donovan ◽  
S.J Pearton ◽  
...  
Keyword(s):  
Dry Etching ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas

Comparison of chlorine- and fluorine-based inductively coupled plasmas for dry etching of InGaZnO4 films

2013 ◽  
Vol 546 ◽  
pp. 136-140 ◽  
Author(s):  
Jong Cheon Park ◽  
Ok Geun Jeong ◽  
Jin Kon Kim ◽  
Young-Hoon Yun ◽  
Stephen J. Pearton ◽  
...  
Keyword(s):  
Dry Etching ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas

Low bias dry etching of III-nitrides in Cl2-based inductively coupled plasmas

1998 ◽  
Vol 27 (4) ◽  
pp. 166-170 ◽  
Author(s):  
Hyun Cho ◽  
C. B. Vartuli ◽  
S. M. Donovan ◽  
J. D. Mackenzie ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Dry Etching ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas

Cl2-Based Dry Etching Of The AIGaInN System In Inductively Coupled Plasmas

1997 ◽  
Vol 483 ◽  
Author(s):  
Hyun Cho ◽  
C. B. Vartuli ◽  
C. R. Abernathy ◽  
S. M. Donovan ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Systematic Study ◽  
Etch Rate ◽  
Dry Etching ◽  
The Other ◽  
Pattern Transfer ◽  
Inductively Coupled Plasmas ◽  
Source Power ◽  
Inductively Coupled ◽  
Coupled Plasmas

AbstractCl2-based Inductively Coupled Plamas with low additional dc self-biases(−100V) produce convenient etch rates(500–1500Å.min−1) for GaN, AIN, InN, InAiN and InGaN. A systematic study of the effects of additive gas(Ar, N2, H2), discharge composition and ICP source power and chuck power on etch rate and surface morphology has been performed. The general trends are to go through a maximum in etch rate with percent C12 in the discharge for all three mixtures, and to have an increase(decrease) in etch rate with source power(pressure). Since the etching is strongly ion-assisted, anisotropic pattern transfer is readily achieved. Maximum etch selectivities of approximately 6 for InN over the other nitrides were obtained.

Selective dry etching of InGaP over GaAs in inductively coupled plasmas

2000 ◽  
Vol 29 (5) ◽  
pp. 586-590 ◽  
Author(s):  
P. Leerungnawarat ◽  
H. Cho ◽  
D. C. Hays ◽  
J. W. Lee ◽  
M. W. Devre ◽  
...  
Keyword(s):  
Dry Etching ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas
Sign in / Sign up

Export Citation Format

Share Document