Wide band gap amorphous hydrogenated carbon films grown by plasma enhanced chemical vapor deposition

2000 ◽  
Vol 18 (2) ◽  
pp. 356-360 ◽  
Author(s):  
A. Convertino ◽  
P. Visconti ◽  
R. Cingolani
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wide Band ◽  
Carbon Films ◽  
Wide Band Gap ◽  
Amorphous Hydrogenated Carbon

Hydrogenated Amorphous Silicon-Nitrogen, a-Si,N:H ALLOYS: An Alternative to A-SI,C:H for the Wide Band Gap Photo-Active Material in Tandem PV Cells

1993 ◽  
Vol 297 ◽  
Author(s):  
M.J. Williams ◽  
S.M. Cho ◽  
G. Lucovsky
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Active Material ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Wide Band ◽  
Wide Band Gap ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous

We have investigated a-Si,N:H alloys as an alternative wide band-gap, photo-active material. The entire alloy range between a-Si:H and a-Si3N4:H can be formed by a remote plasma-enhanced chemical-vapor deposition (PECVD) process. Other studies have demonstrated that a-Si,N:H alloys could be doped to form window materials for p-i-n devices. This paper focuses on alloy materials with E04 bandgaps to about 2.2 eV. We have prepared these a-Si,N:H alloys, characterized their microstructure, and studied their photoconductivity, sensitivity to light-soaking and transport properties. For example, with increased alloying we show that i) the white-light photoconductivity and ii) the kinetics and magnitude of the decay of photoconducitivity under intense illumination (the Staebler-Wronski effect), are about the same as for PV-grade a-Si:H.

Epitaxial growth of wide-band-gap ZnGa2O4 films by mist chemical vapor deposition

2014 ◽  
Vol 386 ◽  
pp. 190-193 ◽  
Author(s):  
Takayoshi Oshima ◽  
Mifuyu Niwa ◽  
Akira Mukai ◽  
Tomohito Nagami ◽  
Toshihisa Suyama ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wide Band ◽  
Wide Band Gap

Wide band gap and conducting tungsten carbide (WC) thin films prepared by hot wire chemical vapor deposition (HW-CVD) method

2016 ◽  
Vol 183 ◽  
pp. 315-317 ◽  
Author(s):  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhavar ◽  
Rupali Kulkarni ◽  
Vaishali Waman ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wide Band ◽  
Hot Wire ◽  
Wide Band Gap ◽  
Cvd Method

DEPOSITION OF WIDE BAND GAP DLC FILMS USING R.F. PECVD AT VERY LOW POWER

2011 ◽  
Vol 25 (29) ◽  
pp. 3941-3949 ◽  
Author(s):  
P. K. BARHAI ◽  
RISHI SHARMA ◽  
B. B. NAYAK
Keyword(s):  
Band Gap ◽  
Chemical Vapor ◽  
Wide Band ◽  
Carbon Films ◽  
Wide Band Gap ◽  
Force Microscopy ◽  
Atomic Force ◽  
Frequency Plasma ◽  
Bending Modes ◽  
Deposited Films

Wide band gap diamond-like carbon films (DLCs) are deposited on silicon (1 0 0) substrates using capacitive coupled radio frequency plasma-enhanced chemical vapor deposition (R.F. PECVD) technique. The deposition of films is carried out at a constant pressure (~5×10-2 mbar ) using acetylene precursor diluted with argon at constant R.F. power of 5 W. Raman spectroscopy of deposited DLC films shows broad G peak near 1550 cm-1 and a weak D peak near 1320 cm1. FTIR plot of DLC films shows a peak near 2900 cm-1 corresponding to C–H stretching mode and peaks below 2000 cm-1 corresponding to C–C modes and C–H bending modes. Maximum hardness of the deposited films is found to be ~15 GPa. Band gap of the DLC films is ~3.5 eV. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) pictures show that the deposited films are amorphous. Deposition mechanism of wide band gap DLC film is explained on the basis of subplantation model.

Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technology

2014 ◽  
Vol 563 ◽  
pp. 50-55 ◽  
Author(s):  
Raffaella Lo Nigro ◽  
Sergio Battiato ◽  
Giuseppe Greco ◽  
Patrick Fiorenza ◽  
Fabrizio Roccaforte ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wide Band ◽  
Organic Chemical ◽  
Wide Band Gap ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Device Technology

Deposition and Etching of Amorphous Carbon Films Prepared by ECR-Plasma-Enhanced Benzene Chemical Vapor Deposition

1998 ◽  
Vol 555 ◽  
Author(s):  
Xiao-Hua Chen ◽  
Laren M. Tolbert ◽  
Z. Y. Ning ◽  
Dennis W. Hess
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electron Cyclotron Resonance ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Benzene Vapor ◽  
Plasma Etch ◽  
Ecr Plasma ◽  
Amorphous Hydrogenated Carbon

AbstractAmorphous hydrogenated carbon thin films have been deposited from benzene vapor in a microwave electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD) system. Plasma enhanced dissociation and reaction of benzene were monitored by mass spectrometry. Deposited films were characterized by Fourier transform infrared spectroscopy and fluorescence spectroscopy. The effect of the deposition rate on the film density and plasma etch resistance was also studied. The etch resistance of deposited carbon film is higher than the conventional resist Novolac.

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