Hydrogenated Amorphous Silicon-Nitrogen, a-Si,N:H ALLOYS: An Alternative to A-SI,C:H for the Wide Band Gap Photo-Active Material in Tandem PV Cells

1993 ◽  
Vol 297 ◽  
Author(s):  
M.J. Williams ◽  
S.M. Cho ◽  
G. Lucovsky
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Active Material ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Wide Band ◽  
Wide Band Gap ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous

We have investigated a-Si,N:H alloys as an alternative wide band-gap, photo-active material. The entire alloy range between a-Si:H and a-Si3N4:H can be formed by a remote plasma-enhanced chemical-vapor deposition (PECVD) process. Other studies have demonstrated that a-Si,N:H alloys could be doped to form window materials for p-i-n devices. This paper focuses on alloy materials with E04 bandgaps to about 2.2 eV. We have prepared these a-Si,N:H alloys, characterized their microstructure, and studied their photoconductivity, sensitivity to light-soaking and transport properties. For example, with increased alloying we show that i) the white-light photoconductivity and ii) the kinetics and magnitude of the decay of photoconducitivity under intense illumination (the Staebler-Wronski effect), are about the same as for PV-grade a-Si:H.

Epitaxial growth of wide-band-gap ZnGa2O4 films by mist chemical vapor deposition

2014 ◽  
Vol 386 ◽  
pp. 190-193 ◽  
Author(s):  
Takayoshi Oshima ◽  
Mifuyu Niwa ◽  
Akira Mukai ◽  
Tomohito Nagami ◽  
Toshihisa Suyama ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wide Band ◽  
Wide Band Gap

Wide band gap and conducting tungsten carbide (WC) thin films prepared by hot wire chemical vapor deposition (HW-CVD) method

2016 ◽  
Vol 183 ◽  
pp. 315-317 ◽  
Author(s):  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhavar ◽  
Rupali Kulkarni ◽  
Vaishali Waman ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wide Band ◽  
Hot Wire ◽  
Wide Band Gap ◽  
Cvd Method

Bonding Defects in Hydrogenated Amorphous Silicon

1996 ◽  
Vol 420 ◽  
Author(s):  
G. Lucovsky ◽  
H. Yang
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Alloys ◽  
High Concentrations ◽  
Charged Carrier ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous

AbstractA mechanism for charged-carrier-trapping-inducedde fect metastability in hydrogenated amorphous silicon (a-Si:H) and in hydrogenated amorphous silicon alloys containing relatively high concentrations of oxygen and/or nitrogen atoms (a-Si:X:H, X = O or N) is described. The experimental results that identified this defect metastability mechanism were i) differences in the Staebler-Wronski effect in a-Si:H and a-Si:N:H alloys prepared from N2 and NH3 source gases by remote plasma-enhanced chemical-vapor deposition, and ii) differences in defect generation at N-atom terminated Si-SiO2 interfaces prepared from NH3 and N2O.

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