Silicon nitride films deposited at substrate temperatures <100 °C in a permanent magnet electron cyclotron resonance plasma

1999 ◽  
Vol 17 (5) ◽  
pp. 2612-2618 ◽  
Author(s):  
C. Doughty ◽  
D. C. Knick ◽  
J. B. Bailey ◽  
J. E. Spencer
Keyword(s):  
Silicon Nitride ◽  
Permanent Magnet ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Electron Cyclotron Resonance Plasma ◽  
Silicon Nitride Films ◽  
Substrate Temperatures ◽  
Resonance Plasma

Deposition of Diamond using an Electron Cyclotron Resonance Plasma System

1994 ◽  
Vol 339 ◽  
Author(s):  
Donald R. Gilbert ◽  
Rajiv Singh ◽  
W. Brock Alexander ◽  
Dong Gu Lee ◽  
Patrick Doering
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Plasma System ◽  
Electron Cyclotron Resonance Plasma ◽  
Ecr Plasma ◽  
Low Pressures ◽  
Substrate Temperatures ◽  
Resonance Plasma

ABSTRACTWe have used an electron cyclotron resonance plasma system to perform chemical vapor deposition experiments on single-crystal, (110) oriented diamond substrates. The depositions were carried out at 0.060 Torr using mixtures of methanol in hydrogen. Substrate temperatures were varied from approximately 620 to 800 °C The film morphology was examined using SEM and microstructural phase determination was attempted using micro-Raman spectroscopy. Based on the results of these experiments, we have determined general trends for the characteristics of films deposited on diamond from the ECR plasma at low pressures and temperatures.

Sign in / Sign up

Export Citation Format

Share Document