Molecular dynamics simulations of deep penetration by channeled ions during low-energy ion bombardment of III–V semiconductors

1992 ◽  
Vol 10 (2) ◽  
pp. 651 ◽  
Author(s):  
N. G. Stoffel
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Ion Bombardment ◽  
Low Energy ◽  
Deep Penetration ◽  
Dynamics Simulations

Molecular Dynamics Simulations and Experimental Evidence for Deep Penetration by Channeled Ions During Low-Energy Ion Bombardment of III-V Semiconductors

1991 ◽  
Vol 236 ◽  
Author(s):  
N.G. Stoffel ◽  
S.A. Schwarz ◽  
M.A.A. Pudensi ◽  
K. Kash ◽  
L.T. Florez ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Secondary Ion Mass Spectrometry ◽  
Lattice Energy ◽  
Ion Bombardment ◽  
Device Fabrication ◽  
Low Energy ◽  
Deep Penetration ◽  
Extensive Degradation ◽  
Dynamics Simulations

AbstractMolecular dynamics simulations are used to investigate the formation of deep crystalline damage during the low-energy ion bombardment of semiconductor crystals. The trajectories of primary ions are calculated as they propagated through a model crystal lattice. Energy losses by nuclear recoil and and by electronic excitation are included. For beams of heavy ions at energies below 1 keV, the average penetration range of the simulated trajectories is only a few nanometers. However, a small, but, significant fraction of the ions are found to scatter into <011= axial channels through which they propagate tens of nm below the surface. This effect is used to explain high-resolution secondary ion mass spectrometry and photoluminescence data which reveal deep ion penetration and optical damage on the same length scale. Our results suggest that unintentional ion channeling is a major factor in the extensive degradation of optical and electrical properties of semiconductor surfaces which are exposed to low energy ion bombardment during device fabrication.

Surface and Near-Surface Atom Dynamics During Low Energy Xe Ion Bombardment of Si and Fcc Surfaces

1990 ◽  
Vol 193 ◽  
Author(s):  
M. V. R. Murty ◽  
H. S. Lee ◽  
Harry A. Atwater
Keyword(s):  
Molecular Dynamics ◽  
Surface Layer ◽  
Ion Bombardment ◽  
Low Energy ◽  
Surface Processes ◽  
Defect Production ◽  
Near Surface ◽  
Qualitative Nature ◽  
Dynamics Simulations ◽  
Atom Dynamics

ABSTRACTSurface and near-surface processes have been studied during low energy Xe ion bombardment of Si (001) and fcc surfaces using molecular dynamics simulations. Defect production is enhanced near the surface of smooth Si (001) surfaces with respect to the bulk in the energy range 20–150 eV, but is not confined exclusively to the surface layer. The extent and qualitative nature of bombardment-induced dissociation of small fcc islands on an otherwise smooth fcc (001) surface is found to depend strongly on island cohesive energy.

scholarly journals Growth mechanism of hydrogenated carbon films: molecular dynamics simulations of the effects of low energy CH radical

2012 ◽  
Vol 61 (3) ◽  
pp. 030701
Author(s):  
Song Qing ◽  
Ji Li ◽  
Quan Wei-Long ◽  
Zhang Lei ◽  
Tian Miao ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Growth Mechanism ◽  
Carbon Films ◽  
Low Energy ◽  
Dynamics Simulations ◽  
Ch Radical
Sign in / Sign up

Export Citation Format

Share Document