High-selectivity pattern transfer processes for self-assembled monolayer electron beam resists

1997 ◽  
Vol 15 (3) ◽  
pp. 1446-1450 ◽  
Author(s):  
D. W. Carr ◽  
M. J. Lercel ◽  
C. S. Whelan ◽  
H. G. Craighead ◽  
K. Seshadri ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Selectivity ◽  
Pattern Transfer ◽  
Self Assembled Monolayer ◽  
Transfer Processes ◽  
Self Assembled

Production of Nanopatterns by a Combination of Electron Beam Lithography and a Self-Assembled Monolayer for an Antibody Nanoarray

2007 ◽  
Vol 7 (2) ◽  
pp. 410-417 ◽  
Author(s):  
Guo-Jun Zhang ◽  
Takashi Tanii ◽  
Yuzo Kanari ◽  
Iwao Ohdomari
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Beam ◽  
Electron Beam Lithography ◽  
High Specificity ◽  
Nonspecific Binding ◽  
Self Assembled Monolayer ◽  
Incubation Condition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Self Assembled

We report on a flexible method of producing antibody (IgG) nanopatterns by combining electron beam (EB) lithography and a perfluorodecyltriethoxysilane (FDTES) self-assembled monolayer (SAM). Using EB lithography of the FDTES SAM, we easily fabricated IgG patterns with feature sizes on the order of 100 nm. The patterned IgG retained its ability to interact specifically with an anti-IgG. The influence of different concentrations of the IgG and anti-IgG on the resulting fluorescent IgG arrays was investigated. These IgG nanopatterns appeared to be remarkably well controlled and showed almost no detectable nonspecific binding of proteins on a hydrophobic SAM under a suitable incubation condition, characterized by atomic force microscopy, and epi-fluorescence microscopy. The technique enables the realization of high-throughput protein nanoscale arrays with high specificity.

Electron beam effects on (CH2)17 self‐assembled monolayer SiO2/Si specimens

1994 ◽  
Vol 12 (4) ◽  
pp. 2478-2485 ◽  
Author(s):  
D. R. Baer ◽  
M. H. Engelhard ◽  
D. W. Schulte ◽  
D. E. Guenther ◽  
Li‐Qiong Wang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Self Assembled Monolayer ◽  
Self Assembled

Formation, Characterization, and Sub-50-nm Patterning of Organosilane Monolayers with Embedded Disulfide Bonds:  An Engineered Self-Assembled Monolayer Resist for Electron-Beam Lithography

Langmuir ◽  
2003 ◽  
Vol 19 (23) ◽  
pp. 9748-9758 ◽  
Author(s):  
Xuejun Wang ◽  
Wenchuang Hu ◽  
Rajagopal Ramasubramaniam ◽  
Gary H. Bernstein ◽  
Gregory Snider ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Disulfide Bonds ◽  
Self Assembled Monolayer ◽  
Self Assembled

scholarly journals Silicon Metalens Fabrication from Electron Beam to UV-Nanoimprint Lithography

Nanomaterials ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 2329
Author(s):  
Angela Mihaela Baracu ◽  
Marius Andrei Avram ◽  
Carmen Breazu ◽  
Mihaela-Cristina Bunea ◽  
Marcela Socol ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Nanoimprint Lithography ◽  
Pattern Transfer ◽  
Silicon Substrates ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
Transfer Processes ◽  
Low Efficiency ◽  
Design And Manufacture

This study presents the design and manufacture of metasurface lenses optimized for focusing light with 1.55 µm wavelength. The lenses are fabricated on silicon substrates using electron beam lithography, ultraviolet-nanoimprint lithography and cryogenic deep reactive-ion etching techniques. The designed metasurface makes use of the geometrical phase principle and consists of rectangular pillars with target dimensions of height h = 1200 nm, width w = 230 nm, length l = 354 nm and periodicity p = 835 nm. The simulated efficiency of the lens is 60%, while the master lenses obtained by using electron beam lithography are found to have an efficiency of 45%. The lenses subsequently fabricated via nanoimprint are characterized by an efficiency of 6%; the low efficiency is mainly attributed to the rounding of the rectangular nanostructures during the pattern transfer processes from the resist to silicon due to the presence of a thicker residual layer.

Sign in / Sign up

Export Citation Format

Share Document