scholarly journals Lamellar orientation of block copolymer using polarity switch of nitrophenyl self-assembled monolayer induced by electron beam

2017 ◽  
Author(s):  
Hiroki Yamamoto ◽  
Guy Dawson ◽  
Takahiro Kozawa ◽  
Alex P. G. Robinson
Keyword(s):  
Electron Beam ◽  
Block Copolymer ◽  
Self Assembled Monolayer ◽  
Lamellar Orientation ◽  
Self Assembled ◽  
Polarity Switch

scholarly journals Lamellar Orientation of a Block Copolymer via an Electron-Beam Induced Polarity Switch in a Nitrophenyl Self-Assembled Monolayer or Si Etching Treatments

2020 ◽  
Vol 4 (2) ◽  
pp. 19 ◽  
Author(s):  
Hiroki Yamamoto ◽  
Guy Dawson ◽  
Takahiro Kozawa ◽  
Alex P. G. Robinson
Keyword(s):  
Electron Beam ◽  
Block Copolymer ◽  
Self Assembly ◽  
Self Assembled Monolayer ◽  
Vertical Orientation ◽  
Lithographic Patterning ◽  
Si Substrates ◽  
Lamellar Orientation ◽  
Assembled Monolayers ◽  
Self Assembled

Directed self-assembly (DSA) was investigated on self-assembled monolayers (SAMs) chemically modified by electron beam (EB) irradiation, which is composed of 6-(4-nitrophenoxy) hexane-1-thiol (NPHT). Irradiating a NPHT by EB could successfully induce the orientation and selective patterning of block copolymer domains. We clarified that spatially-selective lamellar orientations of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) could be achieved by a change of an underlying SAM. The change of an underlying SAM is composed of the transition of an NO2 group to an NH2 group, which is induced by EB. The modification in the polarity of different regions of the SAM with EB lithography controlled the lamellar orientation of PS-b-PMMA. The reduction of the NPHT SAM plays an important role in the orientation of block copolymer. This method might significantly simplify block copolymer DSA processes when it is compared to the conventional DSA process. By investigating the lamellae orientation with EB, it is clarified that only suitable annealing temperatures and irradiation doses lead to the vertical orientation. We also fabricated pre-patterned Si substrates by EB lithographic patterning and reactive ion etching (RIE). DSA onto such pre-patterned Si substrates was proven to be successful for subdivision of the lithographic patterns into line and space patterns.

High-selectivity pattern transfer processes for self-assembled monolayer electron beam resists

1997 ◽  
Vol 15 (3) ◽  
pp. 1446-1450 ◽  
Author(s):  
D. W. Carr ◽  
M. J. Lercel ◽  
C. S. Whelan ◽  
H. G. Craighead ◽  
K. Seshadri ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Selectivity ◽  
Pattern Transfer ◽  
Self Assembled Monolayer ◽  
Transfer Processes ◽  
Self Assembled

Production of Nanopatterns by a Combination of Electron Beam Lithography and a Self-Assembled Monolayer for an Antibody Nanoarray

2007 ◽  
Vol 7 (2) ◽  
pp. 410-417 ◽  
Author(s):  
Guo-Jun Zhang ◽  
Takashi Tanii ◽  
Yuzo Kanari ◽  
Iwao Ohdomari
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Beam ◽  
Electron Beam Lithography ◽  
High Specificity ◽  
Nonspecific Binding ◽  
Self Assembled Monolayer ◽  
Incubation Condition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Self Assembled

We report on a flexible method of producing antibody (IgG) nanopatterns by combining electron beam (EB) lithography and a perfluorodecyltriethoxysilane (FDTES) self-assembled monolayer (SAM). Using EB lithography of the FDTES SAM, we easily fabricated IgG patterns with feature sizes on the order of 100 nm. The patterned IgG retained its ability to interact specifically with an anti-IgG. The influence of different concentrations of the IgG and anti-IgG on the resulting fluorescent IgG arrays was investigated. These IgG nanopatterns appeared to be remarkably well controlled and showed almost no detectable nonspecific binding of proteins on a hydrophobic SAM under a suitable incubation condition, characterized by atomic force microscopy, and epi-fluorescence microscopy. The technique enables the realization of high-throughput protein nanoscale arrays with high specificity.

Electron beam effects on (CH2)17 self‐assembled monolayer SiO2/Si specimens

1994 ◽  
Vol 12 (4) ◽  
pp. 2478-2485 ◽  
Author(s):  
D. R. Baer ◽  
M. H. Engelhard ◽  
D. W. Schulte ◽  
D. E. Guenther ◽  
Li‐Qiong Wang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Self Assembled Monolayer ◽  
Self Assembled

Guide Pattern Functionalization for Regularly Arranged PS-PDMS Self-Assembled Nanodot Pattern by Brush Treatment

2011 ◽  
Vol 497 ◽  
pp. 116-121 ◽  
Author(s):  
Takashi Akahane ◽  
Miftakhul Huda ◽  
Takuro Tamura ◽  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Electron Beam ◽  
Block Copolymer ◽  
Self Assembled

We have studied functionalization of guide pattern with brush treatment. Especially, the effect of brush treatment on ordering of nanodots formed on the guide pattern was investigated. We used polydimethylsiloxane (PDMS) as brush modification to form self-assembled nanodots on the guide pattern using polystyrene (PS) - PDMS as block copolymer. The brush treatment using toluene solvent made guide patterns of the electron beam (EB) drawn resist behave like PDMS guide patterns and good ordering of the nanodots has been achieved. It was demonstrated that the brush treatment enabled the PDMS nanodots to be regularly located in the desired positions defined by the EB drawn guide patterns.

Formation, Characterization, and Sub-50-nm Patterning of Organosilane Monolayers with Embedded Disulfide Bonds:  An Engineered Self-Assembled Monolayer Resist for Electron-Beam Lithography

Langmuir ◽  
2003 ◽  
Vol 19 (23) ◽  
pp. 9748-9758 ◽  
Author(s):  
Xuejun Wang ◽  
Wenchuang Hu ◽  
Rajagopal Ramasubramaniam ◽  
Gary H. Bernstein ◽  
Gregory Snider ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Disulfide Bonds ◽  
Self Assembled Monolayer ◽  
Self Assembled

Self‐assembled monolayer electron beam resist on GaAs

1993 ◽  
Vol 62 (5) ◽  
pp. 476-478 ◽  
Author(s):  
R. C. Tiberio ◽  
H. G. Craighead ◽  
M. Lercel ◽  
T. Lau ◽  
C. W. Sheen ◽  
...  
Keyword(s):  
Electron Beam ◽  
Self Assembled Monolayer ◽  
Self Assembled
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