Electron beam effects on (CH2)17 self‐assembled monolayer SiO2/Si specimens

1994 ◽  
Vol 12 (4) ◽  
pp. 2478-2485 ◽  
Author(s):  
D. R. Baer ◽  
M. H. Engelhard ◽  
D. W. Schulte ◽  
D. E. Guenther ◽  
Li‐Qiong Wang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Self Assembled Monolayer ◽  
Self Assembled

High-selectivity pattern transfer processes for self-assembled monolayer electron beam resists

1997 ◽  
Vol 15 (3) ◽  
pp. 1446-1450 ◽  
Author(s):  
D. W. Carr ◽  
M. J. Lercel ◽  
C. S. Whelan ◽  
H. G. Craighead ◽  
K. Seshadri ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Selectivity ◽  
Pattern Transfer ◽  
Self Assembled Monolayer ◽  
Transfer Processes ◽  
Self Assembled

Production of Nanopatterns by a Combination of Electron Beam Lithography and a Self-Assembled Monolayer for an Antibody Nanoarray

2007 ◽  
Vol 7 (2) ◽  
pp. 410-417 ◽  
Author(s):  
Guo-Jun Zhang ◽  
Takashi Tanii ◽  
Yuzo Kanari ◽  
Iwao Ohdomari
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Beam ◽  
Electron Beam Lithography ◽  
High Specificity ◽  
Nonspecific Binding ◽  
Self Assembled Monolayer ◽  
Incubation Condition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Self Assembled

We report on a flexible method of producing antibody (IgG) nanopatterns by combining electron beam (EB) lithography and a perfluorodecyltriethoxysilane (FDTES) self-assembled monolayer (SAM). Using EB lithography of the FDTES SAM, we easily fabricated IgG patterns with feature sizes on the order of 100 nm. The patterned IgG retained its ability to interact specifically with an anti-IgG. The influence of different concentrations of the IgG and anti-IgG on the resulting fluorescent IgG arrays was investigated. These IgG nanopatterns appeared to be remarkably well controlled and showed almost no detectable nonspecific binding of proteins on a hydrophobic SAM under a suitable incubation condition, characterized by atomic force microscopy, and epi-fluorescence microscopy. The technique enables the realization of high-throughput protein nanoscale arrays with high specificity.

Formation, Characterization, and Sub-50-nm Patterning of Organosilane Monolayers with Embedded Disulfide Bonds:  An Engineered Self-Assembled Monolayer Resist for Electron-Beam Lithography

Langmuir ◽  
2003 ◽  
Vol 19 (23) ◽  
pp. 9748-9758 ◽  
Author(s):  
Xuejun Wang ◽  
Wenchuang Hu ◽  
Rajagopal Ramasubramaniam ◽  
Gary H. Bernstein ◽  
Gregory Snider ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Disulfide Bonds ◽  
Self Assembled Monolayer ◽  
Self Assembled

Self‐assembled monolayer electron beam resist on GaAs

1993 ◽  
Vol 62 (5) ◽  
pp. 476-478 ◽  
Author(s):  
R. C. Tiberio ◽  
H. G. Craighead ◽  
M. Lercel ◽  
T. Lau ◽  
C. W. Sheen ◽  
...  
Keyword(s):  
Electron Beam ◽  
Self Assembled Monolayer ◽  
Self Assembled

Electron Beam Lithography on Organosilane Self-Assembled Monolayer Resist

2004 ◽  
Vol 43 (7A) ◽  
pp. 4396-4397 ◽  
Author(s):  
Takashi Tanii ◽  
Takumi Hosaka ◽  
Takeo Miyake ◽  
Iwao Ohdomari
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Self Assembled Monolayer ◽  
Self Assembled
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