Nitrogen‐ion irradiation during the deposition of C1−xNx thin films by ion beam sputtering technique

1996 ◽  
Vol 14 (3) ◽  
pp. 777-780 ◽  
Author(s):  
Satoshi Kobayashi ◽  
Keiko Miyazaki ◽  
Shinji Nozaki ◽  
Hiroshi Morisaki ◽  
Shigeo Fukui ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Nitrogen Ion

Study of defects and structural transformations induced by ion irradiation of Y2O3 thin films deposited by Ion Beam Sputtering

2008 ◽  
Vol 1122 ◽  
Author(s):  
Bertrand Lacroix ◽  
Fabien Paumier ◽  
Michael Jublot ◽  
Jérôme Pacaud ◽  
Rolly J. Gaboriaud
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Structural Transformations ◽  
Deposition Technique ◽  
Ion Beam Sputtering ◽  
Ion Energy ◽  
Beam Sputtering ◽  
Different Doses

AbstractY2O3 thin films deposited by Ion Beam Sputtering (IBS) deposition technique exhibit a particular disordered microstructure. In order to obtain a better knowledge on phase transition mechanisms occurring during irradiation, thin films with different microstructures have been implanted with xenon ions at different energies and different doses. This work established two types of transition (cubic-amorphous or cubic-monoclinic) depending mainly on the ion energy with a possibility to control the damaging kinetic via the pre-existing oxygen disorder.

Effect of Concurrent Ion Bombardment on Structure and Composition of Ion Sputter-Deposited Ni-Ti Thin Films

1992 ◽  
Vol 268 ◽  
Author(s):  
D. S. Grummon ◽  
L. Chang
Keyword(s):  
Thin Films ◽  
Ion Irradiation ◽  
Incidence Angle ◽  
Ion Beam ◽  
Alloy Film ◽  
Ion Beam Sputtering ◽  
Ion Beam Assisted Deposition ◽  
R Ratio ◽  
Beam Sputtering ◽  
Argon Ions

ABSTRACTThin films of approximately equiatomic NiTi have been produced by ion beam sputtering, and by ion beam assisted deposition (IBAD), using 0.1 and 0.5 keV argon ions at fluences giving ion/atom arrival ratios (R-ratios) ranging between 0.26 and 2.21. Ion beam sputtering produced amorphous films which showed several percent titanium loss relative to the alloy target composition. Concurrent irradiation of the growing films with argon ions accentuated the titanium depletion, and R-ratios greater than approximately 1.4 at an assist-beam energy of 0.5keV produced resputtering rates that exceeded the deposition rate. Analysis of experiments with assist-beam energies of 0.5 keV produced a value of 1.75 for εTi/εNi, the ratio of sputteryields for titanium and nickel, in an amorphous alloy film at approximately 325K. Though data for 0.1 keV assist-beam irradiation could be interpreted to yield a similar value for εTi/εNi, resputtering at these energies displayed unexpected dependencies on R-ratio, and is apparently sensitive to the assist-beam incidence angle as well as the R-ratio. No evidence of crystallization of the films was found for the R-ratios examined. However, concurrent ion irradiation produced phenomenological evidence of short range ordering. Nanophase precipitates observed in TEM foils from films produced by ion beam assisted deposition, discovered in previous work and there identified as Ni3Ti, have been found in fact to be titanium nitride.

Preparation of thin films of (Tb,Dy)Fe2 giant magnetostrictive alloy by ion beam sputtering process.

1996 ◽  
Vol 8 (1/2) ◽  
pp. 27-28
Author(s):  
Mitsuhiro WADA ◽  
Yoshihito MATSUMURA ◽  
Hirohisa UCHIDA ◽  
Haru-Hisa UCHIDA ◽  
Hideo KANEKO
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

scholarly journals Fabrication of the Ln-Ba-Cu-O thin films by ion beam sputtering.

Shinku ◽  
1989 ◽  
Vol 32 (3) ◽  
pp. 259-262
Author(s):  
Tetsuro TAJIMA ◽  
Hajime KUWAHARA ◽  
Kohei OTANI ◽  
Tsutom YOTSUYA ◽  
Yoshihiko SUZUKI ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Intrinsic stress and alloying effect in Mo/Ni superlattices: a comparison between ion beam sputtering and thermal evaporation

2005 ◽  
Vol 875 ◽  
Author(s):  
A. Debelle ◽  
G. Abadias ◽  
A. Michel ◽  
C. Jaouen ◽  
Ph. Guérin ◽  
...  
Keyword(s):  
Thermal Evaporation ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Lattice Parameter ◽  
Growth Stress ◽  
Intrinsic Stress ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Deposited Energy

AbstractEpitaxial Mo(110)/Ni(111) superlattices were grown on (1120) single-crystal sapphiresubstrates, by ion beam sputtering (IBS) and thermal evaporation (TE), in order to investigate the role of deposited energy on the interfacial mixing process observed in Mo sublayers. To separate intermixing and growth stress contributions, a careful and detailed characterization of the stress/strain state of both samples was performed by X-ray Diffraction (XRD). Non-equal biaxial coherency stresses are observed in both samples. For the IBS specimen, an additional source of stress, of hydrostatic type, due to growth-induced point defects, is present, resulting in a triaxial stress state. The use of ion irradiation to achieve a controlled stress relaxation can provide additional data and, as shown elsewhere, allows to obtain the stress-free lattice parameter a0 solely linked to chemical effects. For the TE sample, a standard biaxial analysis gives a0. In both samples, the a0 value is lower than the bulk lattice parameter, due to the presence of intermixed Mo(Ni) layers. However, the intermixing is larger in the sputtered Mo sublayers than in the thermal evaporated ones, putting forward the prime role of energy and/or momentum transfer occurring during energetic bombardment.

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