Chemical dry etching of silicon nitride and silicon dioxide using CF4/O2/N2 gas mixtures

1996 ◽  
Vol 14 (5) ◽  
pp. 2802-2813 ◽  
Author(s):  
B. E. E. Kastenmeier ◽  
P. J. Matsuo ◽  
J. J. Beulens ◽  
G. S. Oehrlein
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Dry Etching ◽  
Gas Mixtures

Remote plasma etching of silicon nitride and silicon dioxide using NF3/O2 gas mixtures

1998 ◽  
Vol 16 (4) ◽  
pp. 2047-2056 ◽  
Author(s):  
B. E. E. Kastenmeier ◽  
P. J. Matsuo ◽  
G. S. Oehrlein ◽  
J. G. Langan
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Plasma Etching ◽  
Gas Mixtures ◽  
Remote Plasma

Realization of Silicon Nitride Template for Nanoimprint: A First Result

2007 ◽  
Vol 121-123 ◽  
pp. 669-672 ◽  
Author(s):  
Ze Wen Liu ◽  
Tian Ruo Zhang ◽  
Li Tian Liu ◽  
Zhi Jian Li
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Silicon Wafer ◽  
Silicon Oxide ◽  
Dry Etching ◽  
Wet Etching ◽  
Etching Method ◽  
Etching Mask ◽  
P Type

A first result of realization of silicon nitride templates on 100mm silicon wafer as nanoinprint mold using simple wet etching method is reported in this paper. The process is based on traditional photolithograph and following buffer HF wet etching, which started from a p-type wafer with 400nm thermal silicon oxide, 200nm PECVD silicon nitride and 400nm PECVD silicon oxide sandwich layer. After patterning with lithography, the patterned resist is used as mask for the isotropic underlayer wet etching of silicon dioxide with buffer HF solution. Using the obtained nanosacle silicon dioxide lines as RIE dry etching mask, silicon nitride template of 100nm width with steep sidewalls is successfully realized.

scholarly journals Research on Sapphire Deep Cavity Corrosion and Mask Selection Technology

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 136
Author(s):  
Yiingqi Shang ◽  
Hongquan Zhang ◽  
Yan Zhang
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Chemical Vapor ◽  
Nitride Layer ◽  
Wet Etching ◽  
Silicon Dioxide Layer ◽  
Etching Depth ◽  
Deep Cavity ◽  
Mask Layer ◽  
Layer Composite

Aimed at the problem of the small wet etching depth in sapphire microstructure processing technology, a multilayer composite mask layer is proposed. The thickness of the mask layer is studied, combined with the corrosion rate of different materials on sapphire in the sapphire etching solution, different mask layers are selected for the corrosion test on the sapphire sheet, and then the corrosion experiment is carried out. The results show that at 250 °C, the choice is relatively high when PECVD (Plasma Enhanced Chemical Vapor Deposition) is used to make a double-layer composite film of silicon dioxide and silicon nitride. When the temperature rises to 300 °C, the selection ratio of the silicon dioxide layer grown by PECVD is much greater than that of the silicon nitride layer. Therefore, under high temperature conditions, a certain thickness of silicon dioxide can be used as a mask layer for deep cavity corrosion.

Temperature dependence of the etch rate and selectivity of silicon nitride over silicon dioxide in remote plasma NF3/Cl2

1995 ◽  
Vol 67 (13) ◽  
pp. 1902-1904 ◽  
Author(s):  
J. Staffa ◽  
D. Hwang ◽  
B. Luther ◽  
J. Ruzyllo ◽  
R. Grant
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Temperature Dependence ◽  
Etch Rate ◽  
Remote Plasma

Reaction ergodography for silicon nitride bond formation by the nitridation of silicon dioxide

1992 ◽  
Vol 96 (7) ◽  
pp. 3029-3033 ◽  
Author(s):  
Akitomo Tachibana ◽  
Yuzuru Kurosaki ◽  
Hiroyuki Fueno ◽  
Toshiaki Sera ◽  
Tokio Yamabe
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Bond Formation

scholarly journals Simulation of Proton Beam Effects in Thin Insulating Films

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
Ljubinko Timotijevic ◽  
Irfan Fetahovic ◽  
Djordje Lazarevic ◽  
Milos Vujisic
Keyword(s):  
Monte Carlo ◽  
Silicon Nitride ◽  
Integrated Circuits ◽  
Silicon Dioxide ◽  
Monte Carlo Simulations ◽  
Proton Energy ◽  
Transport Parameters ◽  
Insulating Layer ◽  
Insulating Films ◽  
Ultrathin Layers

Effects of exposing several insulators, commonly used for various purposes in integrated circuits, to beams of protons have been investigated. Materials considered include silicon dioxide, silicon nitride, aluminium nitride, alumina, and polycarbonate (Lexan). The passage of proton beams through ultrathin layers of these materials has been modeled by Monte Carlo simulations of particle transport. Parameters that have been varied in simulations include proton energy and insulating layer thickness. Materials are compared according to both ionizing and nonionizing effects produced by the passage of protons.

scholarly journals Thermal and Kerr nonlinear properties of plasma-deposited silicon nitride/ silicon dioxide waveguides

2008 ◽  
Vol 16 (17) ◽  
pp. 12987 ◽  
Author(s):  
Kazuhiro Ikeda ◽  
Robert E. Saperstein ◽  
Nikola Alic ◽  
Yeshaiahu Fainman
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Nonlinear Properties
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