Integrated processing of silicon oxynitride films by combined plasma and rapid‐thermal processing

1996 ◽  
Vol 14 (6) ◽  
pp. 3017-3023 ◽  
Author(s):  
S. V. Hattangady ◽  
H. Niimi ◽  
G. Lucovsky
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Oxynitride ◽  
Integrated Processing

SIMS STUDY OF SILICON OXYNITRIDE RAPID THERMALLY GROWN IN NITRIC OXIDE

2001 ◽  
Vol 08 (05) ◽  
pp. 569-573
Author(s):  
R. LIU ◽  
K. H. KOA ◽  
A. T. S. WEE ◽  
W. H. LAI ◽  
M. F. LI ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Gate Dielectric ◽  
State Of The Art ◽  
Rapid Thermal Processing ◽  
Growth Characteristics ◽  
Silicon Oxynitride ◽  
Mos Devices ◽  
Secondary Ion

As the gate dielectric for ULSI MOS devices scales in the ultrathin regime, it is fabricated increasingly with silicon oxynitride instead of silicon dioxide films. One way to obtain silicon oxynitride films is the rapid thermal oxidation of silicon in NO (RTNO). Earlier RTNO growth studies were not sufficiently comprehensive as well as limited by temperature uncertainty and nonuniformity across the wafer. Using a state-of-the-art rapid thermal processing (RTP) system, RTNO growth characteristics at oxidation pressures of 100 and 760 Torr, oxidation temperatures from 900 to 1200°C and oxidation times from 0 to 480 s were obtained and investigated. Anomalies in the growth characteristics were observed. It was also demonstrated that secondary ion mass spectrometry (SIMS) using the MCs + method could be used to accurately determine the depth distribution of N in ultrathin silicon oxynitride films.

Silicon Oxynitride and Oxide-Nitride-Oxide Gate Dielectrics by Combined Plasma-Rapid Thermal Processing

1994 ◽  
Vol 342 ◽  
Author(s):  
Y. Ma ◽  
S.V. Hattangady ◽  
T. Yasuda ◽  
H. Niimi ◽  
S. Gandhi ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Silicon Oxide ◽  
Gate Dielectric ◽  
Rapid Thermal Processing ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Dielectric Films ◽  
Mos Capacitor ◽  
Nitride Oxide

ABSTRACTWe have used a combination of plasma and rapid thermal processing for the formation of thin gate-dielectric films. The bulk dielectric films investigated include silicon oxide, oxynitride and multilayer oxide-nitride-oxide heterostructures formed by plasma-assisted oxidation, remoteplasma-enhanced chemical-vapor deposition (remote-PECVD) followed by post-deposition rapid thermal annealing (RTA). Auger electron spectroscopy (AES) and infrared absorption spectroscopy (IR) have been used to study the chemistry of interface formation and the bulk dielectric chemical bonding, respectively. Electrical characterization of MOS capacitor structures incorporating these dielectrics was performed by conventional capacitance and current voltage techniques, C-V and I-V, respectively.

An XPS Study of Silicon Oxynitride Rapid Thermally Grown in Nitric Oxide

1999 ◽  
Vol 592 ◽  
Author(s):  
W. H. Lai ◽  
M. F. Li ◽  
J. S. Pan ◽  
R. Liu ◽  
L. Chan ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Growth Rate ◽  
Measurement Uncertainty ◽  
Thermal Processing ◽  
State Of The Art ◽  
Rapid Thermal Processing ◽  
Growth Characteristics ◽  
Silicon Oxynitride ◽  
Temperature And Pressure ◽  
Xps Study

ABSTRACTEarlier growth studies on the rapid thermal oxidation of silicon in NO (RTNO) were not sufficiently comprehensive and were limited by temperature measurement uncertainty and thermal non-uniformity across the wafer. Using a state-of-the-art rapid thermal processing (RTP) system, the RTNO growth characteristics at 100 and 760 Torr, from 900 to 1200°C and from 0 to 480 s were investigated. It was found that the initial growth rate anomalously decreasedwith temperature and pressure. These anomalies were correlated to the evolution of the XPS N 1s spectrum of the RTNO film with oxidation time, temperature and pressure.

Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient

2019 ◽  
Vol 8 (1) ◽  
pp. P35-P40 ◽  
Author(s):  
Haruo Sudo ◽  
Kozo Nakamura ◽  
Susumu Maeda ◽  
Hideyuki Okamura ◽  
Koji Izunome ◽  
...  
Keyword(s):  
Point Defect ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Defect Reaction

Modeling, Identification, and Control of Rapid Thermal Processing Systems

1994 ◽  
Vol 141 (11) ◽  
pp. 3200-3209 ◽  
Author(s):  
Charles D. Schaper ◽  
Mehrdad M. Moslehi ◽  
Krishna C. Saraswat ◽  
Thomas Kailath
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
And Control

5 nm Gate Oxide Grown by Rapid Thermal Processing for Future MOSFETs

1990 ◽  
Vol 29 (Part 2, No. 1) ◽  
pp. L137-L140 ◽  
Author(s):  
Hisashi Fukuda ◽  
Akira Uchiyama ◽  
Takahisa Hayashi ◽  
Toshiyuki Iwabuchi ◽  
Seigo Ohno
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Gate Oxide

Diffusion of Zn into Gaas 0.6 P0.4:Te From Zn-Doped Oxide Films By Rapid Thermal Processing

1987 ◽  
Vol 92 ◽  
Author(s):  
A. Usami ◽  
Y. Tokuda ◽  
H. Shiraki ◽  
H. Ueda ◽  
T. Wada ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Oxide Films ◽  
Zn Diffusion ◽  
Enhanced Diffusion ◽  
Conventional Furnace ◽  
Zn Concentration ◽  
The Difference ◽  
Doped Oxide

ABSTRACTRapid thermal processing using halogen lamps was applied to the diffusion of Zn into GaAs0.6 P0.4:Te from Zn-doped oxide films. The Zn diffusion coefficient of the rapid thermal diffused (RTD) samples at 800°C for 6 s was about two orders of magnitude higher than that of the conventional furnace diffused samples at 800°C for 60 min. The enhanced diffusion of Zn by RTD may be ascribed to the stress field due to the difference in the thermal expansion coefficient between the doped oxide films and GaAs0.6P0.4 materials, and due to the temperature gradient in GaAs0.6P0 4 materials. The Zn diffusion coefficient at Zn concentration of 1.0 × l018 cm−3 was 3.6 × 10−11, 3.1 × 10−11 and 5.0 × 10−12 cm2 /s for the RTD samples at 950°C for 6 s from Zn-, (Zn,Ga)- and (Zn,P)-doped oxide films, respectively. This suggests that Zn diffusibility was controlled by the P in the doped oxide films.

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