Instrument for the measurement of adhesion forces in ultrahigh vacuum surface analysis apparatuses

1994 ◽  
Vol 12 (3) ◽  
pp. 889-891 ◽  
Author(s):  
Kunio Takahashi ◽  
Takashi Iiyama ◽  
Noboru Katoh ◽  
Tadao Onzawa
Keyword(s):  
Surface Analysis ◽  
Ultrahigh Vacuum ◽  
Adhesion Forces

scholarly journals Cryogenic stabilization of high vapor pressure samples for surface analysis under ultrahigh vacuum conditions

1999 ◽  
Vol 17 (5) ◽  
pp. 2668-2675 ◽  
Author(s):  
J. J. Bruckner ◽  
K. Wozniak ◽  
S. Hardcastle ◽  
A. Sklyarov ◽  
S. Seal ◽  
...  
Keyword(s):  
Vapor Pressure ◽  
Surface Analysis ◽  
Ultrahigh Vacuum ◽  
High Vapor Pressure ◽  
High Vapor

A new design for an ultrahigh vacuum surface analysis chamber with optical scatter measurement capability

1993 ◽  
Vol 64 (5) ◽  
pp. 1287-1291 ◽  
Author(s):  
R. J. Simonson ◽  
M. M. Altamirano ◽  
R. J. Champetier ◽  
M. R. Cohen ◽  
J. Snyder ◽  
...  
Keyword(s):  
Surface Analysis ◽  
Ultrahigh Vacuum ◽  
Measurement Capability

scholarly journals An ultrahigh vacuum surface analysis station constructed with aluminum alloy materials.

Shinku ◽  
1985 ◽  
Vol 28 (12) ◽  
pp. 904-909 ◽  
Author(s):  
Yoichiro HORI ◽  
Nobuaki NODA ◽  
Kenya AKAISHI ◽  
Akira MIYAHARA
Keyword(s):  
Aluminum Alloy ◽  
Surface Analysis ◽  
Ultrahigh Vacuum

Mechanism of the Slow-Down of the Silicon Etch Rate by a Fluorocarbon Overlayer in CF4/H2 Reactive Ion Etching of Silicon

1987 ◽  
Vol 98 ◽  
Author(s):  
Gottlieb S. Oehrlein ◽  
Steve W. Robey ◽  
Mark A. Jaso
Keyword(s):  
Surface Analysis ◽  
Etch Rate ◽  
Ultrahigh Vacuum ◽  
Silicon Surfaces ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Etched Silicon ◽  
Analysis System ◽  
Fluorocarbon Film

ABSTRACTWe have utilized an ultrahigh vacuum surface analysis system interfaced via a load-lock to a flexible diode dry etching apparatus to study vacuum transferred CF4/H2 reactive ion etched silicon surfaces by X-ray photoemission spectroscopy (XPS). From the observation and analysis of silicon-fluorine bonding underneath the fluorocarbon film and the dependence of the abundance of fluorosilyl species on the thickness of the fluorocarbon overlayer, the role of the fluorocarbon film in the slow-down of the Si etch rate has been elucidated: The role of the fluorocarbon film is to “protect” the Si surface from attack of fluorine, rather than prevent the escape of SiF4 etch product.

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