Effect of deposition parameters on the microstructure of ion beam assisted deposition TiN films

1994 ◽  
Vol 12 (5) ◽  
pp. 2723-2727 ◽  
Author(s):  
H. Kheyrandish ◽  
J. S. Colligon ◽  
J‐K. Kim
1988 ◽  
Vol 131 ◽  
Author(s):  
Kenji Gamo ◽  
Susumu Namba

ABSTRACTThe chtaracteristics of ion beam assisted deposition are discussed and compared with those of photon beam assisted deposition. Effects of various deposition parameters including ion species, beam energy and substrate temperature are discussed. Deposited films usually include impurities such as C and O. Inclusion of oxygen takes place by enhanced oxidation by background oxygen and may be reduced by depositing in a clean vacuum. Promising applications of maskless ion beam assisted deposition are also discussed.


2008 ◽  
Vol 1150 ◽  
Author(s):  
Ruben Hühne ◽  
Konrad Güth ◽  
Martin Kidszun ◽  
Rainer Kaltofen ◽  
Vladimir Matias ◽  
...  

AbstractIon-beam assisted deposition (IBAD) offers the possibility to prepare thin textured films on amorphous or non-textured substrates. In particular, the textured nucleation of TiN is promising for the development of a conducting buffer layer architecture for YBCO coated conductors based on the IBAD approach. Accordingly, cube textured IBAD-TiN layers have been deposited reactively using pulsed laser deposition on Si/Si3N4 substrates as well as on polished Hastelloy tapes using different amorphous seed layers. Metallic buffer layers such as Au, Pt or Ir were grown epitaxially on top of the TiN layer showing texture values similar to the IBAD layer. Smooth layers were obtained using a double layer of Au/Pt or Au/Ir. Biaxially textured YBCO layers were achieved using SrRuO3 or Nb-doped SrTiO3 as a conductive oxide cap layer. Finally, different amorphous conducting seed layers were applied for the IBAD-TiN process. Highly textured TiN films were achieved on amorphous Ta0.75Ni0.25 layers showing a similar in-plane orientation of about 8° as on standard seed layers.


1996 ◽  
Vol 68 (17) ◽  
pp. 2360-2362 ◽  
Author(s):  
J. W. Gerlach ◽  
U. Preckwinkel ◽  
H. Wengenmair ◽  
T. Kraus ◽  
B. Rauschenbach

1995 ◽  
Vol 396 ◽  
Author(s):  
Costas G. Fountzoulas

AbstractHard, low-friction silicon-containing diamond-like carbon coatings (Si-DLC), were formed by Ar+ ion beam assisted deposition (IBAD), on 5 in. diameter silicon wafers. The diffusion pump oil precursor (tetraphenyl-tetramethyl-trisiloxane: (C6H5)4(CH3)4Si3O2) was evaporated through seven, 3 mm diameter, closely packed apertures (multinozzle/multi-aperture container) arranged in a hexagonal pattern, approximately 5 mm apart according to mathematical model [1[ developed at ARL describing the spatial distribution of film deposition from nozzles and apertures onto inclined substrates.The ion energy was kept at 40 keV whereas the ion current density and the oil evaporation temperature were varied to produce hard, lubricious and adherent films. The multinozzle array allowed the relatively uniform (± 20%) coverage of the entire 5 in. substrate. The thickness and the microhardness of the films were measured along the rectilinear surface coordinates of the substrate area. Depending on the deposition parameters the standard deviation of the coating thicknesses and Knoop micro-hardness varied from 14 to 30 percent respectively over the substrate. This is a significant improvement from the previously used single nozzle set up where the standard deviation of the coating thickness was 50 to 100 percent for 2 in. diameter substrates. The Knoop microhardness and the sliding friction coefficient of these coatings ranged from 10,000 to 20,000 MPa and 0.04 to 0.2 respectively. These values are in agreement with our previously reported single nozzle results [2].


1994 ◽  
Vol 9 (9) ◽  
pp. 2440-2449 ◽  
Author(s):  
François Rossi ◽  
Bernard André ◽  
A. van Veen ◽  
P.E. Mijnarends ◽  
H. Schut ◽  
...  

Carbon films with up to 32 at. % of nitrogen have been prepared with ion beam assisted magnetron, using a N2+/N+ beam at energies between 50 and 300 eV. The composition and density of the films vary strongly with the deposition parameters. EELS, SXS, XPS, and IR studies show that these a-C: N films are mostly graphitic and have up to 20% sp3 bonding. Nitrogen is mostly combined with carbon in nitrile (C ≡ N) and imine (C=N) groups. It is shown by RBS and NDP that density goes through a maximum as the average damage energy per incoming ion increases. Positron annihilation spectroscopy shows that the void concentration in the films goes through a minimum with average damage energy. These results are consistent with a densification induced by the collisions at low average damage energy values and induced graphitization at higher damage energy values. These results are similar to what is observed for Ar ion assisted deposition of a-C films. The mechanical properties of these films have been studied with a nanoindenter, and it was found that the hardness and Young's modulus go through a maximum as the average damage energy is increased. The maximum of mechanical properties corresponds to the minimum in the void concentration in the film. Tribological studies of the a-C: N show that the friction coefficient obtained against diamond under dynamic loading decreases strongly as the nitrogen composition increases, this effect being more pronounced at low loads.


1988 ◽  
Vol 128 ◽  
Author(s):  
E. P. Donovan ◽  
C. A. Carosella ◽  
D. Van Vechten

ABSTRACTThe annealing behavior of the optical properties of silicon nitride films (Si1-xNx) is described for films fabricated by ion beam assisted deposition. The data are needed for the precise manufacture of optical filters, where the index of refraction must be predicted from deposition parameters and film annealing history.The reflection of homogeneous, amorphous samples deposited on (100) silicon substrates was measured from 500 to 3120 nm. Fits to the interference spectra were obtained over the range 1000 to 3120 nm to obtain the index of refraction vs wavelength as a function of film nitrogen content. Nitrogen atom fraction was varied from.2 to.58 by variation of the incident relative fluxes of nitrogen ion beam current to evaporant silicon flux. The films were annealed in argon at 450 C, 600 C, 750 C, and 1100 C and the measurements repeated. The systematic shifts in index of refraction with annealing temperature are described.


1990 ◽  
Vol 187 ◽  
Author(s):  
K. S. Grabowski ◽  
R. A. Kant

AbstractEpitaxial growth of Ni (111) on Si (111) has previously been obtained at room temperature by 25-keV-Ni ion beam assisted deposition, where both ion and vapor fluxes were incident at 45° to the specimen normal. This work explores the effect of a wider range of deposition conditions on epitaxial film quality. Nominally 300-nm-thick films were deposited at room temperature on Si (111) and other substrates. The substrates were sputter cleaned by the Ni ion beam immediately prior to deposition. Ion energies of 25 to 175 keV, relative ion to vapor fluxes R from 0 to 0.1, and vapor deposition rates of 0.05 to 0.5 nm/s were examined. Bragg-Brentano symmetric x-ray diffraction evaluated film quality while Ni (220) grazing-incidence x-ray diffraction rocking curves verified film epitaxy. Film quality changed gradually over these deposition parameters, with an optimum at 25 keV and an R of about 0.01. At higher energies and R values sputtering and radiation damage destroyed the film epitaxy


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