Surface characterization of GaAs after the reactive ion etching of GeMoW ohmic contact in radio frequency SF6–O2 plasma

1993 ◽  
Vol 11 (5) ◽  
pp. 2536-2542 ◽  
Author(s):  
A. Campo ◽  
Ch. Cardinaud ◽  
G. Turban ◽  
C. Dubon‐Chevallier ◽  
V. Amarger ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Ohmic Contact ◽  
Surface Characterization ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
O2 Plasma

Reactive ion etching characterization of a-SiC: H in CF4/O2 plasma

1995 ◽  
Vol 29 (1-3) ◽  
pp. 176-180 ◽  
Author(s):  
G. Saggio ◽  
E. Verona ◽  
P. Di Rosa ◽  
S. La Monica ◽  
R. Salotti ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
O2 Plasma

Characterization of Hg0.7Cd0.3Te n- on p-type structures obtained by reactive ion etching induced p- to n conversion

2000 ◽  
Vol 29 (6) ◽  
pp. 837-840 ◽  
Author(s):  
J. Antoszewski ◽  
C. A. Musca ◽  
J. M. Dell ◽  
L. Faraone
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
P Type

Characterization of reactive ion etching of sol-gel SiO 2 using Taguchi optimization method

1999 ◽  
Author(s):  
Terence C. Wee ◽  
Boon Siew Ooi ◽  
Yan Zhou ◽  
Yuen Chuen Chan ◽  
Yee Loy Lam
Keyword(s):  
Sol Gel ◽  
Reactive Ion Etching ◽  
Optimization Method ◽  
Taguchi Optimization ◽  
Ion Etching ◽  
Taguchi Optimization Method
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