In situ spatially resolved surface characterization of realistic semiconductor structure after reactive ion etching process

1988 ◽  
Vol 64 (5) ◽  
pp. 2399-2402 ◽  
Author(s):  
Gottlieb S. Oehrlein ◽  
Kevin K. Chan ◽  
Mark A. Jaso
Keyword(s):  
Surface Characterization ◽  
Reactive Ion Etching ◽  
Semiconductor Structure ◽  
Etching Process ◽  
Ion Etching ◽  
Spatially Resolved

Surface characterization of GaAs after the reactive ion etching of GeMoW ohmic contact in radio frequency SF6–O2 plasma

1993 ◽  
Vol 11 (5) ◽  
pp. 2536-2542 ◽  
Author(s):  
A. Campo ◽  
Ch. Cardinaud ◽  
G. Turban ◽  
C. Dubon‐Chevallier ◽  
V. Amarger ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Ohmic Contact ◽  
Surface Characterization ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
O2 Plasma

CHF3 and NH3 Additives for Reactive ion Etching of GaAs Using CCl2F2 and SICI4

1991 ◽  
Vol 240 ◽  
Author(s):  
Kuen-Sane Din ◽  
Gou-Chung Chi
Keyword(s):  
Photoelectron Spectroscopy ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Experimental Results ◽  
Etching Process ◽  
Ion Etching ◽  
X Ray ◽  
Gaas Wafer ◽  
Self Bias

ABSTRACTTwo fundamental requirements for RIE are the formation of nearly volatile etch products and sufficiently high physical bombardment to remove all substances on the surface. In this study, the GaAs wafer was in-situ pretreated with NH3 or CHF3 plasma prior to actual etching process. The main etchants are CCl2F2 and SiCl4. By adding these additives to the main etch gases, the resulting etch performance was significantly affected. For instance, DC self-bias of CCl2F2 plasma is relatively low and can increase with such gas addition, thus the etching properties related to physical bombardment change too. CHF3 improve GaAs etch rate in CCl2F2through increasing concentration of reactive chlorine-containing species. While CHF3 enhance etch rate in SiCl4 plasma. The as etched samples were examined with X-ray photoelectron spectroscopy. Details of the experimental results will be described.

In Situ Design of Experiments for A Reactive Ion Etching Process

1999 ◽  
Vol 569 ◽  
Author(s):  
Cecilia G. Galarza ◽  
Pete Klimecky ◽  
Pramod P. Khargonekar ◽  
Fred L. Terry
Keyword(s):  
Design Of Experiments ◽  
Plasma Etching ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Etching Process ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Ion Etching ◽  
Spatial Uniformity

ABSTRACTWe introduce a new procedure to perform a design of experiments (DOE) for plasma etching processes. In particular, we use in situ etch rate estimations to maximize the number of observable setpoints during a single run of the etching process. This procedure is applied to characterize the spatial uniformity of a plasma chamber used in the manufacturing of flat panel displays.

The Use of Advanced Analytical Techniques for Characterization of the Chemical, Physical, and Crystallographic Nature of a Surface

1973 ◽  
Vol 31 ◽  
pp. 132-133 ◽  
Author(s):  
R. E. Herfert
Keyword(s):  
Surface Characterization ◽  
Analytical Techniques ◽  
X Ray Diffraction ◽  
Depth Of Penetration ◽  
X Ray ◽  
The Past ◽  
Transmission Electron ◽  
Scanning Electron

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.

Modeling and simulation of the lag effect in a deep reactive ion etching process

2006 ◽  
Vol 16 (12) ◽  
pp. 2570-2575 ◽  
Author(s):  
Yiyong Tan ◽  
Rongchun Zhou ◽  
Haixia Zhang ◽  
Guizhang Lu ◽  
Zhihong Li
Keyword(s):  
Modeling And Simulation ◽  
Reactive Ion Etching ◽  
Etching Process ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
Lag Effect
Sign in / Sign up

Export Citation Format

Share Document