Determination of the geometrical configuration of Bi on GaAs (110) by x‐ray standing wave triangulation

1993 ◽  
Vol 11 (4) ◽  
pp. 2354-2358 ◽  
Author(s):  
A. Herrera‐Gómez ◽  
T. Kendelewicz ◽  
J. C. Woicik ◽  
K. E. Miyano ◽  
P. Pianetta ◽  
...  
2013 ◽  
Vol 58 (6) ◽  
pp. 934-938 ◽  
Author(s):  
A. Yu. Seregin ◽  
Yu. A. D’yakova ◽  
S. N. Yakunin ◽  
I. A. Makhotkin ◽  
A. S. Alekseev ◽  
...  

1988 ◽  
Vol 143 ◽  
Author(s):  
S. M. Heald ◽  
G. M. Lamble

AbstractImportant for the understanding of multilayer materials is a determination of their interface structure. The extended x-ray absorption fine structure (EXAFS) technique can be useful, particularly for interfaces with a high degree of structural disorder. This paper reviews the application of EXAFS to multilayers, and describes the standing wave enhancement of the EXAFS from multilayer interfaces. Examples are given for W-C and Ni- Ti multilayers.


1995 ◽  
Vol 324 (2-3) ◽  
pp. 122-132 ◽  
Author(s):  
M.F. Kadodwala ◽  
A.A. Davis ◽  
G. Scragg ◽  
B.C.C. Cowie ◽  
M. Kerkar ◽  
...  

1987 ◽  
Vol 36 (9) ◽  
pp. 4769-4773 ◽  
Author(s):  
A. E. M. J. Fischer ◽  
E. Vlieg ◽  
J. F. van der Veen ◽  
M. Clausnitzer ◽  
G. Materlik

1986 ◽  
Vol 33 (6) ◽  
pp. 4402-4405 ◽  
Author(s):  
S. M. Durbin ◽  
L. E. Berman ◽  
B. W. Batterman ◽  
J. M. Blakely

1999 ◽  
Vol 441 (2-3) ◽  
pp. 515-528 ◽  
Author(s):  
G.J. Jackson ◽  
J. Lüdecke ◽  
D.P. Woodruff ◽  
A.S.Y. Chan ◽  
N.K. Singh ◽  
...  
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